STT-MRAM




Investigation of magnetization dynamics spin transfer torque driven reversal in perpendicular shape anisotropy magnetic tunnel junctions   Spin Transfer Torque Random Access Memories (STTRAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, density, downsize scalability below 20nm nodes, infinite endurance plus radiation hardness. Major microelectronics companies are aiming to introduce […]

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On August 31, we have the pleasure to welcome Kevin Garello R&D Senior Scientist at IMEC, Belgium. He will give us a seminar which will take place at SPINTEC 434A at 10:15. SOT-MRAM 300mm integration for low power and ultrafast embedded memories Microelectronics industry is facing major challenges related to the volatility of CMOS cache […]

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Spintec développe une mémoire STT-MRAM dix fois plus rapide que les produits annoncés pour 2016 chez Samsung ou Intel. Sa vitesse d’écriture est inférieure à la nanoseconde, contre 5 à 10 nanosecondes habituellement. La différence tient au processus de déclenchement du pulse d’écriture. Spintec l’accélère grâce à deux polariseurs d’aimantation orthogonale, placés de part et […]

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J. Hérault, M. Souza, Y. Hadj-Larbi, M-T. Delaye, R. Sousa, L. Prejbeanu, B. Dieny Spin transfer torque (STT) switching in magnetic random access memories (MRAM) is the most power efficient method to write information in MRAM cell. It requires a constant critical current density for writing resulting in lower write currents as the cell size […]

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