R.C. Sousa, S. Bandiera, M. Marins de Castro, B. Lacoste, L. San-Erneterio-Alvarez, L. Nistor, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodrnacq, B. Dieny
This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in sampIes integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than SOOps can be achieved in these structures with corresponding write energy less than lOOtJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.