2D AND SEMICONDUCTOR SPINTRONICS

Overview

The « semiconductor and 2D spintronics » group deals with spin dependent phenomena in two important classes of materials: Si and Ge which are the materials of today’s microelectronics and transition metal dichalcogenides which are emerging 2D materials with exceptional optical and spin-orbit properties. We are studying model systems grown by molecular beam epitaxy and their spin properties.

Research topics

Magnetism induced by manganese doping in germanium

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(2005-present). Manganese doped germanium films grown by molecular beam epitaxy undergo a nanospinodal decomposition: the system spontaneously decompose into Mn-rich areas like nanocolumns. Our research focuses on the atomic, electronic structure and magnetic properties of these nanosized Mn-rich areas. We also investigate their coupling with charge carriers to induce novel magneto-transport properties.

Spin injection in silicon and germanium

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(2011-present). The original goal of this topic is to build the spin field-effect-transistor (FET) made of silicon and germanium. For this purpose, we study the microscopic mechanism of electrical spin injection in Si and Ge using three-terminal devices and lateral spin valves. In particular, we have investigated the influence of interface states in the mechanism of spin injection from a magnetic tunnel junction into Si and Ge. However the missing ingredient to build the spin-FET is a sizeable spin-orbit coupling to manipulate the spin state by electric fields.

Spin-orbit effects in silicon and germanium

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(2013-present). Si and Ge exhibit low bulk spin-orbit coupling and we take advantage of metal/Si and metal/Ge interfaces to create a large Rashba spin-orbit coupling to manipulate the electron spin state. Moreover, the same Rashba spin-orbit interaction can be used to generate and detect spin currents in silicon or germanium by spin-to-charge interconversion. Another class of materials we use for spin-to-charge interconversion are topological insulators like the alpha phase of tin. In these materials, spin-to-charge conversion occurs at the surface or interface: by growing these materials onto Si or Ge we aim at transferring the spin-to-charge interconversion into the semiconductor.

Van der Waals epitaxy of transition metal dichalcogenides (TMDs) for spintronics

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(2015-present). The goal of this topic is the growth of single crystalline TMDs over large areas (typically cm2) for both the study of spin dependent phenomena like spin valleytronics and for the development of new 2D spintronic devices. For this purpose, we use single crystalline substrates and the van der Waals epitaxy in a molecular beam epitaxy machine. Our efforts then focus on electrical and magnetic doping as well as on the growth of heterostructures.

The team

Former members

Post-docs

  • Minh-Tuan DAU (2016-2017)

PhD

  • Fabien RORTAIS (2013-2016)

Internships

  • Takeo KOIKE (Sept.-Nov. 2017)

Projects

  • ANR MAGCVALLEY (2018-2021)
  • ANR GEMO (2008-2010)
  • RTRA IMAGE (2009-2011)
  • ANR SiGeSPIN (2014-2017)
  • ANR MoS2ValleyControl (2015-2017)
  • ANR TOP-RISE (2017-2020)
  • Projet Phare CEA DRF-DRT 2D Factory (2015-2019)
  • Projet CARNOT H2D3D (2017-2019)

Partners

  • INAC/PHELIQS, MEM, SYMMES, Grenoble, France
  • CEA LETI, LITEN, Grenoble, France
  • Unité Mixte de Physique CNRS-THALES, Palaiseau, France
  • Institut NEEL, Grenoble, France
  • Politecnico di Milano, Milan, Italy
  • Forschungszentrum Jülich, Germany
  • INSA, Toulouse, France
  • IJL, Nancy, France
  • LNCMI, Toulouse, France

Recent news

  • Spin-orbitronics at a topological insulator-semiconductor interface (July 02nd, 2020) Spin-orbitronics at a topological insulator-semiconductor interface
    Topological insulators (TI) represent a new class of insulating materials hosting metallic surface states. Moreover, those surface states exhibit a Dirac cone energy dispersion where the strong spin-orbit coupling leads to a helical spin texture ...
  • Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111) (March 10th, 2020) Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)
    Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) under the application of an external ...
  • Experimental evidence of the valley Nernst effect in WSe2 (March 06th, 2020) Experimental evidence of the valley Nernst effect in WSe2
    The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst effect. After the discovery of the spin Nernst effect, the collection would not ...
  • Masters thesis projects for Spring 2020 (September 30th, 2019) Masters thesis projects for Spring 2020
    You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2020. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 ...
  • Post-doctoral position – Nanostructures of 2D Materials for quantum optics and spintronics (August 20th, 2019) Post-doctoral position - Nanostructures of 2D Materials for quantum optics and spintronics
    Post-doctoral position available at IRIG/Spintec (12 months with possible extension) Nanostructures of 2D Materials for quantum optics and spintronics (NanoDRUM project) Recently, there has been tremendous interest in layered transition metal dichalcogenides (TMDCs). It started with the ...

Publications

For the full list of publications See the personal webpage of Matthieu JAMET, Alain MARTY and Céline VERGNAUD.

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