The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Nikita STRELKOV (2016-2019)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- MRAM Postdoc position announcement (November 20th, 2018)
We are looking for a post doctoral researcher to work on a project focused on measuring the magnetic fields and their stability in magnetic memory devices. The candidate will act as the liaison between Spintec ...
- PhD defense – « Study and optimization of thermal stability and temperature dependence of P-STTMRAM for industrial applications. » (November 20th, 2018)
On Wednsday 5 december, Luc TILLIE defends his PhD at 14h00 in room Chrome 1 of Maison Minatec – 3, Parvis Louis Néel, 38054 GRENOBLE Cedex . Luc TILLIE, will defend his thesis, jointly carried out ...
- Seminar – “Normally-off“ Computing for Smart Systems (November 15th, 2018)
On december 05, We have the pleasure to welcome professor Lionel TORRES from Polytech Montpellier, Université de Montpellier. He comes at Grenoble for the PHD defense of Luc TILLIE at 14H. He kindly takes this ...
- Efficient microwave amplification by heat modulation at GHz frequency in spintronics oscillators (November 13th, 2018)
Due to the nanometer size of magnetic tunnel junctions and high interfacial resistance of ultrathin MgO tunnel barriers, temperature modulation at GHz frequency can be achieved in these devices and efficiently use to amplify microwaves ...
- Impact of intergrain effective coupling due to huge thermal gradients in heat assisted magnetic recording (November 12th, 2018)
Heat assisted magnetic recording (HAMR) is a new hard disk drive (HDD) recording technology which uses a temporary near field heating of the media during write to increase hard disk drive storage density. It has ...