The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- SPINTRONIC DEVICES FOR MEMORY AND LOGIC APPLICATIONS (July 02nd, 2015)
Spinelectronics is a very rapidly expanding area of R&D which merges magnetism and electronics (Nobel Prize 2007). Since the discovery of giant magneto-resistance (GMR) in 1988, several breakthroughs have further boosted this field [spin-valves 1990, ...
- FINITE ELEMENT MODELING OF CHARGE- AND SPIN-CURRENTS IN MAGNETORESISTIVE PILLARS WITH CURRENT CROWDING EFFECTS (July 02nd, 2015)
Charge- and spin-diffusion equations, taking into account spin-diffusion and spin-transfer torque, were numerically solved using a finite element method in complex noncollinear geometry. As an illustration, this approach was used to study the spin-dependent transport ...
- EXTENDED SCALABILITY AND FUNCTIONALITIES OF MRAM BASED ON THERMALLY ASSISTED WRITING (July 02nd, 2015)
A recent report from ITRS ERD/ERM working group has identified STT MRAM and RedoxRAM as the most promising candidates for emerging scalable and manufacturable non-volatile memories1. This paper is focused on MRAM. It explains how ...
- THERMALLY ASSISTED MRAMS: ULTIMATE SCALABILITY AND LOGIC FUNCTIONALITIES (July 02nd, 2015)
This paper is focused on thermally assisted magnetic random access memories (TA-MRAMs). It explains how the heating produced by Joule dissipation around the tunnel barrier of magnetic tunnel junctions (MTJs) can be used advantageously to assist ...
- MRAM WITH SOFT REFERENCE LAYER: IN-STACK COMBINATION OF MEMORY AND LOGIC FUNCTIONS (July 02nd, 2015)
Q. Stainer, L. Lombard, K. Mackay, R. C. Sousa, I. L. Prejbeanu, B. Dieny This paper describes an original concept of thermally assisted MRAM in which memory and logic functions are combined in the same stack. ...