MRAM MEMORIES

Overview

The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.

Research directions

Perpendicular Anisotropy Materials

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High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM

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Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

CMOS Integration for Non-Volatile Logic

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The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.

Thermally Assisted Switching

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Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.

The team

Permanent staff

SOUSA
Ricardo SOUSA
ricardo.sousa@cea.fr

DIENY
Bernard DIENY
bernard.dieny@cea.fr

NOZIERES
Jean-Pierre NOZIERES
jean-pierre.nozieres@cea.fr

PREJBEANU
Lucian PREJBEANU
lucian.prejbeanu@cea.fr

Post-docs

  • Nikita STRELKOV (2016-2019)

PhD

Process Engineers

Former members

Post-docs
  • Andrey TIMOPHEEV (2014-2017)
  • Van Dai NGUYEN (2016-2018)

PhD

  • Hieu Tan NGUYEN (2013-2016)
  • Jyotirmoy CHATTERGEE (2014-2017)
  • Luc TILLIE (2015-2018)
  • Nicolas PERRISSIN (2015-2018)

Process Engineers

  • Jude GUELFFUCCI (2015-2017)
  • Nathalie LAMARD (2016-2017)
  • Guillaume LAVAITTE (2015-2016)

Projects

  • Samsung SGMI (2014-2017)
  • ANR Excalyb (2014-2017)
  • Heumem (2015-2018)
  • EU-FET Spice (2016-2019)
  • EU Great (2016-2019)
  • ERC Magical (2015-2020)

Partners

  • CEA LETI, Grenoble, France
  • Institut NEEL, Grenoble, France
  • Crocus Technology, Grenoble, France
  • Samsung, San Jose, USA
  • Singulus AG, Kahl am Main, Germany
  • Aarhus University, Aarhus, Denmark

Recent news

  • MRAM CONCEPTS FOR SUB-NANOSECOND PRECESSIONAL SWITCHING AND SUB-20NM CELL SCALING (July 02nd, 2015)
    R.C. Sousa, S. Bandiera, M. Marins de Castro, B. Lacoste, L. San-Erneterio-Alvarez, L. Nistor, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodrnacq, B. Dieny This work reports on advances in MRAM ...
  • WP1 : RELIABILITY AND IMPROVED PERFORMANCES OF SPINTRONIC MATERIALS (July 02nd, 2015)
    In WP1, studies were conducted to understand the mechanisms responsible for the dielectric breakdown in magnetic tunnel junctions (MTJs). A key asset of STT-MRAM is their write endurance which is much better than in all ...
  • THERMALLY ASSISTED MAGNETIC MEMORIES (TA-MRAM) (July 02nd, 2015)
    M. Kerekes, C. Papusoi, C. Ducruet, O. Redon, R. Sousa, L. Prejbeanu, B. Dieny Magnetic random access memories (MRAM) have been the first attempt to realize a Spintronics based technology. The information is stored in the ...
  • SPIN TRANSFER TORQUE WRITING IN THERMALLY ASSISTED MAGNETIC MEMORIES (July 02nd, 2015)
    J. Hérault, M. Souza, Y. Hadj-Larbi, M-T. Delaye, R. Sousa, L. Prejbeanu, B. Dieny Spin transfer torque (STT) switching in magnetic random access memories (MRAM) is the most power efficient method to write information in MRAM ...
  • UNE COUCHE « TAMPON » QUI CHANGE TOUT ! (July 02nd, 2015)
    Une jonction tunnel magnétique exploite des variations de résistance électrique sous l’effet d’un champ magnétique. Des chercheurs de l’Inac ont montré que l’insertion d’une couche « tampon » entre deux structures cristallines différentes peut augmenter ...

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