The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- WP2 : SWITCHING SPEED AND COHERENCE (July 02nd, 2015)
Thanks to their unique set of assets (non-volatility, speed, density, endurance), STT-MRAM are seen as a unique candidate for DRAM and/or Cache SRAM replacement allowing to drastically reduce the power consumption of electronic circuits thanks ...
- WP3 : MODELLING AND DESIGN TOOLS (July 02nd, 2015)
Modelling and design tools were developed in the frame of HYMAGINE to cover both the fundamental and design aspects of the project. Concerning the fundamental aspects, we developed a code allowing to calculate both the transport ...
- MAGNETOSTATICS OF SYNTHETIC FERRIMAGNET ELEMENTS (July 02nd, 2015)
Olivier Fruchart,-, Bernard Diény We calculate the magnetostatic energy of synthetic ferrimagnet (SyF) elements, consisting of two thin ferromagnetic layers coupled antiferromagnetically, e.g. through RKKY coupling. Uniform magnetization is assumed in each layer. Exact formulas as ...
- EMERGING NON-VOLATILE MEMORIES: MAGNETIC AND RESISTIVE TECHNOLOGIES (July 02nd, 2015)
B Dieny In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate ...
- ELECTRICAL MODELING OF STOCHASTIC SPIN TRANSFER TORQUEWRITING INMAGNETIC TUNNEL JUNCTIONS FOR MEMORY AND LOGIC APPLICATIONS (July 02nd, 2015)
Yue Zhang , Weisheng Zhao , Guillaume Prenat , Thibaut Devolder , Jacques-Olivier Klein , Claude Chappert , Bernard Dieny , and Dafiné Ravelosona Magnetic tunnel junctions (MTJ) are considered as one of the most promising ...