The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
CMOS Integration for Non-Volatile Logic
The challenge to validate hybrid CMOS designs to create non-volatile logic circuits requires the backend integration of MRAM cells with custom CMOS circuits. Our goal is to provide an integration platform for proof-of-concept prototype runs.
Thermally Assisted Switching
Perpendicular anisotropy magnetic tunnel junctions provide a solution to for high density MRAM cells where the cell diameter can be scaled to 20nm and possibly below. Thermal assisted STT writing in perpendicular cells allows large values of thermal stability, while maintaining a low critical current via the thermal re-orientation of perpendicular anisotropy storage layers.
- Nikita STRELKOV (2016-2019)
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- Hieu Tan NGUYEN (2013-2016)
- Jyotirmoy CHATTERGEE (2014-2017)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- EMERGING NON-VOLATILE MEMORIES: MAGNETIC AND RESISTIVE TECHNOLOGIES (July 02nd, 2015)
B Dieny In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate ...
- ELECTRICAL MODELING OF STOCHASTIC SPIN TRANSFER TORQUEWRITING INMAGNETIC TUNNEL JUNCTIONS FOR MEMORY AND LOGIC APPLICATIONS (July 02nd, 2015)
Yue Zhang , Weisheng Zhao , Guillaume Prenat , Thibaut Devolder , Jacques-Olivier Klein , Claude Chappert , Bernard Dieny , and Dafiné Ravelosona Magnetic tunnel junctions (MTJ) are considered as one of the most promising ...
- COMPARISON OF DISPERSION AND ACTUATION PROPERTIES OF VORTEX AND SYNTHETIC ANTIFERROMAGNETIC PARTICLES FOR BIOTECHNOLOGICAL APPLICATIONS (July 02nd, 2015)
S. Leulmi, H. Joisten, T. Dietsch, C. Iss, M. Morcrette, S. Auffret, P. Sabon, and B. Dieny Magnetic nanoparticles are receiving an increasing interest for various biotechnological applications due to the capability that they offer to ...
- DIFFUSIVE MODEL OF CURRENT-IN-PLANE-TUNNELING IN DOUBLE MAGNETIC TUNNEL JUNCTIONS (July 02nd, 2015)
We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical ...
- MAGNETIC RANDOM ACCESS RANDOM ACCESS (July 02nd, 2015)
1 Introduction 2 Magnetic Tunnel Junctions: A Route for CMOS/Magnetism Integration 3 Spin-Transfer Phenomenon 4 Magnetic Random Access Memories (MRAM) 4.1 Stoner-Wolfarth MRAM (SW-MRAM) 4.2 Toggle MRAM 4.3 Spin-Transfer Torque MRAM (STT-MRAM) 4.4 Thermally Assisted MRAM (TA-MRAM) 5 Racetrack Memories