seminar – Spin-orbit torque devices and their applications for neuromorphic computing

Alain Marty

8 hours ago

On Monday, December 08^th 2025, we have the pleasure to welcome in SPINTEC Pr. Chih-Huang Lai from Department of Materials Science and Engineering, National Tsing Hua University, Taiwan. He will give us a seminar at 11:00 entitled :
Spin-orbit torque devices and their applications for neuromorphic computing

Place : IRIG/SPINTEC, room 434A CEA Building 10.05 (presential access to the conference room at CEA in Grenoble requires an entry authorization. Request it before November 28^th at admin.spintec@cea.fr)

Abstract : Spin-orbit torque (SOT) devices are redefining the landscape of neuromorphic computing by enabling adaptive and efficient information processing. We introduce the Néel tensor torque, a new symmetry-breaking mechanism that captures hidden spin correlations in polycrystalline antiferromagnets (AFMs) [1]. This framework enables field-free SOT switching in FM/AFM systems and, remarkably, allows the AFM state to be “trained” and memorized—an unprecedented feature that mirrors synaptic plasticity.
Complementing this advance, we demonstrate a PtMn/(Co/Pd)₄/Ta multilayer device that unifies binary and multilevel SOT switching within a single geometry [2]. Binary switching provides digital reliability, while multilevel control supports analog weighting for synaptic functions, together achieving high recognition accuracy on benchmark tasks.
These breakthroughs highlight how SOT devices can evolve beyond conventional memory elements into multifunctional building blocks for neuromorphic computing, combining efficiency, adaptability, and scalability.

Chao-Yao Yang, Sheng-Huai Chen, Chih-Hsiang Tseng, Hsiu-Hau Lin, Chih-Huang Lai*, “Néel Tensor Torque in Polycrystalline Antiferromagnets”, Adv. Mater. (2025), doi/10.1002/adma.202506462.
Abhijeet Ranjan, Tamkeen Farooq, Chong-Chi Chi, Hsin-Ya Sung, Rudis Ismael Salinas Padilla, Po-Hung Lin, Wen-Wei Wu, Ming-Yen Lu, Rahul Mishra, Chih-Huang Lai* “Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing” Nano Letters, 25 (2025)

Biography : Prof. Lai received his Ph.D. in Materials Science and Engineering from Stanford University in 1997 and joined National Tsing Hua University (NTHU) the following year. His pioneering research has advanced the development of novel materials for memory technologies, renewable energy, and sustainable materials systems, with landmark contributions in magnetic random-access memory (MRAM), thin-film solar cells, and materials recycling.
He has published more than 230 research papers and holds over 50 awarded patents. His work has not only deepened fundamental scientific understanding but has also driven significant industrial applications. In recognition of his outstanding achievements, Prof. Lai has received numerous prestigious honors, including the Asian Union of Magnetics Societies (AUMS) Award, election as an Academician of the Asia Pacific Academy of Materials (APAM), IEEE Fellow, MRS-T Fellow, and the Micron Chair Professorship.
Currently, Prof. Lai serves as the Associate Dean of the College of Semiconductor Research at NTHU and previously held the position of Dean of the College of Engineering.