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ELECSPIN – An ANR project

Objectives

ELECSPIN project has just been accepted at the 2016 ANR call. This collaborative research project aims to investigate the advanced concept of radically new nanoelectronics devices based on the electric-field control of spin-based phenomena and establish proof of principle demonstrations of multi-terminal energy efficient memory nano devices.  The main  objectives are:

  1. To explore, understand and optimize the physical mechanisms of electric-field control on intrinsic magnetic properties including anisotropy and spin orbit torque using two main approaches: electrostatic charge modulation and ion migratio
  2. To develop highly homogeneous oxide/metallic systems exhibiting low density of intrinsic defects and sharp interfaces
  3. To demonstrate the switching at ultralow power of multi-terminal integrated memory nano devices (domain-wall and spin transfer torque based memory devices)
  4. To investigate the scalability of this concept, their performances in terms of endurance, temperature behaviour, power consumption and develop the first roadmap for the development of voltage controlled spintronics devices.

 

Local contacts at SPINTEC

Hélène Béa and Mair Chshiev

 

Partners

Publications

[ At Spintec (default) | Entire consortium ]

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