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ALL NEWS News archives


Seminar – Selected applications and trends in magnetoresistive sensors

On Friday November 29, 2024 at 13:30 we have the pleasure to welcome Johannes Paul from SENSITEC. He will give us a seminar entitled: Selected applications and trends in magnetoresistive sensors Place: IRIG/SPINTEC, CEA Building 10.05, auditorium 445 Video conference: https://univ-grenoble-alpes-fr.zoom.us/j/98769867024 Meeting ID: 987 6986 7024 Passcode: 025918 Abstract: In this talk I will introduce […]

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Seminar – Embedded STT-MRAM – Building Trust and Moving Ahead

On Friday November 29, 2024 at 10:00 we have the pleasure to welcome Johannes Müller from GlobalFoundries. He will give us a seminar entitled: Embedded STT-MRAM – Building Trust and Moving Ahead Place: IRIG/SPINTEC, CEA Building 10.05, auditorium 445 Video conference: https://univ-grenoble-alpes-fr.zoom.us/j/98769867024 Meeting ID: 987 6986 7024 Passcode: 025918 Abstract: In this talk we will […]

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Palantiri – Horizon Europe EIC Pathfinder project

Building a ubiquitous high-speed Internet from anywhere in the world or a long-range quantum network are two technological challenges that both require the development of a phase-sensitive transducer that can interconvert information from microwave frequencies at which wireless networks or quantum computers operate to optical frequencies, the optimal telecommunications band for long-distance information exchange. However, […]

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LATEST PUBLICATIONS Publications archives


Impact of external magnetic field on Spin Transfer Torque magnetic memory operation

The extent to which an external magnetic field can influence the operation of Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) remains a critical question within the microelectronics industry in particular regarding its use in automotive industry. SPINTEC is actively engaged in an international technical group comprising academic and industrial experts in MRAM technology, with a particular […]

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Development and optimization of large-scale integration of 2D material in memristors

Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) are considered as key candidates to replace silicon in several technologies with enhanced performances. In this work, we address the two remaining challenges to reach their industrial deployment: the wafer scale growth of TMDs and their integration into operational devices using CMOS compatible process. This is achieved […]

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Field-Free Spin–Orbit Torque Switching in Janus Chromium Dichalcogenides

By performing transport simulations on carefully derived Wannier tight-binding models, Janus chromium-based transition-metal dichalcogenide (TMD) monolayers are found to exhibit a spin-orbit torque (SOT) performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry.   The spin–orbit torque (SOT) mechanism represents an innovative […]

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