The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.
Perpendicular Shape Anisotropy
A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- J. Ranier Roiz (2015-2016)
- Nikita Strelkov (2016-2019)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jyotirmoy CHATTERGEE (2014-2017)
- Hieu Tan NGUYEN (2013-2016)
- Antoine Chavent (2013-2015)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Radboud Universiteit, Neijmegen, Netherlands
- Spin transfer torque based magnetic sensor and signal conditioning electronics (May 31st, 2023)
A new type of magnetic sensor based on the spin transfer torque using 50-100nm diameter perpendicular magnetic tunnel junctions was recently reported in the IEEE Sensors Journal. The paper demonstrates the magnetic field sensing principle, ...
- Best poster award at INTERMAG 2023 (May 19th, 2023)
Pedro BRANDAO VEIGA is among Best Poster Award winners at INTERMAG 2023 Conference taking place in May 2023 in Sendai, Japan. The title of his poster is “Engineering of Voltage-Controlled Magnetic Tunnel Junctions at Cryogenic ...
- Best poster award at INTERMAG 2023 (May 17th, 2023)
Théo FROTTIER is among Best Poster Award winners at INTERMAG 2023 Conference taking place in May 2023 in Sendai, Japan. The title of the poster prepared with Aurélie KANDAZOGLOU, Cécile GREZES of Topological Spintronics team ...
- Four years engineer researcher position (May 12th, 2023)
Spintec laboratory is opening a four years engineer researcher position in the framework of the PEPR electronics (part of France 2030 strategy) – project EMCOM (emerging memories for computing). Context: The cost of transferring information between ...
- [POSITION FILLED] PhD grant: exploring new designs addressing fabrication and read/write bottlenecks of Perpendicular-Shape-Anisotropy MRAM (April 13th, 2023)
Position: The objective of the PhD project is to explore disruptive fabrication routes, cell and material designs to lift the two bottlenecks, related to fabrication and efficiency of the write operation with a spin-polarized current. While ...