Overview
From new concepts to devices : we are exploring new concepts in spintronics based on spin dependent transport with various systems; structure inversion asymmetry (spin orbit torques, Rashba effect, Spin Hall Effect, Topological Insulators), and alternative geometries in order to develop innovative architectures of devices.
Research directions
Spin Orbit Torques
We aim at understanding and mastering spin orbit torques for efficient and deterministic magnetization switching with in plane currents.
Spin to charge inter-conversion
We study different mechanisms to inter-convert spin and charge currents using spin orbit interaction: Spin Hall effect, Rashba effect at interfaces and surfaces of Topological insulators.
3-Terminal MRAM
We develop electrically addressable non-volatile memories combining high speed and infinite endurance.
Novel devices and concepts
We study spin dependent transport and pure spin current physics in lateral spin valves as well as novel ways to tailor the magnetic states of nanomagnets, like magnetic origamis.
The team
Former members
Post-docs
- Thomas BRÄCHER (2015-2017)
- Yu FU (2015-2016)
- Murat CUBUKCU (2012-2015)
- Juan Carlos ROJAS SANCHEZ (2010-2013)
- Before 2012:Mario Aurino, Karol Marty, Yasmina Hadj Larbi
- Soong-Gun JE (2016-2018)
- Haozhe YANG (2016-2019)
- Yu FU (2018-2019)
PhD
- Alexandre MOUILLON (2014-2018)
- Gilles ZHAND (2014-2017)
- Tuong Van PHAM (2014-2017)
- Defended before 2016: Alexandru Trifou, Emilie Jue, Alexandre Lopez, Marc Drouard
- Mohamed Ali NSIBI (2014-2018)
- Toshiki GUSHI (exchange program Univ. of Tsukuba 2017-2018)
- Jayshankar NATH (2015-2018)
- Paul NOEL (2016-2019)
- Roméo JUGE (2016-2019)
- Sambit GOSH (with Univ. of Tsukuba, 2018-2021)
- Pyunghwa JANG (visitor from Korea Univ., 2018-2020)
- Maxen COSSET-CHENEAU (2019-2022)
Projects
- EU TOCHA (2019-2023)
- DARPA (2018-2021)
- ANR SkyLogic JCJC, O. Boulle (2018-2021)
- ERC Smart Design, M. Miron (2015-2020)
- ANR OISO (2017-2021)
- ANR TOPRISE (2016-2019)
- ANR SOSPIN (2013-2017)
- EU SPOT (2013-2016)
Partners
- Néel Institut, Grenoble (France)
- Unité Mixte Physique CNRS/Thalès, Palaiseau (France)
- Laboratoire de Physique des Solides, Orsay (France)
- Antaios, Grenoble (France)
- CEA/LETI Grenoble (France)
- Karlsruhe Institute of Technology (Germany)
- National Center for Scientific Research, Demokritos (Greece)
- Catalan Institute of Nanotechnology, Barcelona (Spain)
- University of Barcelona, (Spain)
- In Silicio, (France)
- Singulus (Germany)
- Mainz (Germany)
Recent news
- Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves (March 04th, 2021)
The spin absorption process in a ferromagnetic material depends on the spin orientation relatively to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and ... - Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films (February 25th, 2021)
Large spin Hall angles have been observed in 3d ferromagnetic materials, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigated the evolution of the inverse spin Hall Effect ... - Highlights of SPINTEC research in 2020 (December 10th, 2020)
The research highlights of SPINTEC over the year 2020 have been put together, and are available to download: http://www.spintec.fr/spintec-annual-booklets. This booklet contains the key facts of the lab over the period (contracts, new staff etc.), the ... - SOFT – ERC Proof of Concept grant (November 24th, 2020)
Non-volatility is the main physical feature that fast memories, such as SRAM, are still lacking. Such memories could increase computing performance while reducing significantly the power consumption. The only viable option for sub-ns nonvolatile memory ... - Unveiling the heart of magnetic memory cells thanks to electron holography (November 10th, 2020)
Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower ...
