Overview
From new concepts to devices : we are exploring new concepts in spintronics based on spin dependent transport with various systems; structure inversion asymmetry (spin orbit torques, Rashba effect, Spin Hall Effect, Topological Insulators), and alternative geometries in order to develop innovative architectures of devices.
Research directions
Spin Orbit Torques
We aim at understanding and mastering spin orbit torques for efficient and deterministic magnetization switching with in plane currents.
Spin to charge inter-conversion
We study different mechanisms to inter-convert spin and charge currents using spin orbit interaction: Spin Hall effect, Rashba effect at interfaces and surfaces of Topological insulators.
3-Terminal MRAM
We develop electrically addressable non-volatile memories combining high speed and infinite endurance.
Novel devices and concepts
We study spin dependent transport and pure spin current physics in lateral spin valves as well as novel ways to tailor the magnetic states of nanomagnets, like magnetic origamis.
The team
Former members
Post-docs
- Soong-Gun JE (2016-2018)
- Haozhe YANG (2016-2019)
- Yu FU (2018-2019)
PhD
- Mohamed Ali NSIBI (2014-2018)
- Toshiki GUSHI (exchange program Univ. of Tsukuba 2017-2018)
- Jayshankar NATH (2015-2018)
- Paul NOEL (2016-2019)
- Roméo JUGE (2016-2019)
- Sambit GOSH (with Univ. of Tsukuba, 2018-2021)
- Pyunghwa JANG (visitor from Korea Univ., 2018-2020)
- Maxen COSSET-CHENEAU (2019-2022)
Projects
- EU TOCHA (2019-2023)
- DARPA (2018-2021)
- ANR JCJC, O. Boulle (2018-2021)
- ERC Smart Design, M. Miron (2015-2020)
- ANR OISO (2017-2021)
- ANR TOPRISE (2016-2019)
- ANR SOSPIN (2013-2017)
- EU SPOT (2013-2016)
Partners
- Néel Institut, Grenoble (France)
- Unité Mixte Physique CNRS/Thalès, Palaiseau (France)
- Laboratoire de Physique des Solides, Orsay (France)
- Antaios, Grenoble (France)
- CEA/LETI Grenoble (France)
- Karlsruhe Institute of Technology (Germany)
- National Center for Scientific Research, Demokritos (Greece)
- Catalan Institute of Nanotechnology, Barcelona (Spain)
- University of Barcelona, (Spain)
- In Silicio, (France)
- Singulus (Germany)
- Mainz (Germany)
Former team members
Post-docs
- Thomas BRÄCHER (2015-2017)
- Yu FU (2015-2016)
- Murat CUBUKCU (2012-2015)
- Juan Carlos ROJAS SANCHEZ (2010-2013)
- Before 2012:Mario Aurino, Karol Marty, Yasmina Hadj Larbi
PhD
- Alexandre MOUILLON (2014-2018)
- Gilles ZHAND (2014-2017)
- Tuong Van PHAM (2014-2017)
- Defended before 2016: Alexandru Trifou, Emilie Jue, Alexandre Lopez, Marc Drouard
Recent news
- CONTRABASS – An ANR project (January 15th, 2021)
CONTRABASS stands for Ferroelectric control of Rashba states, a 42 months ANR project starting in December 2020. Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily ... - SPEAR – An H2020 ITN project (December 20th, 2020)
Spintec is part of a European-funded ITN project called SPEAR: Spin-orbit materials, emergent phenomena and related technology training. The project, coordinated by CIC nanoGUNE, seeks to explore new materials for the next generation of computer ... - Highlights of SPINTEC research in 2020 (December 10th, 2020)
The research highlights of SPINTEC over the year 2020 have been put together, and are available to download: http://www.spintec.fr/spintec-annual-booklets. This booklet contains the key facts of the lab over the period (contracts, new staff etc.), the ... - SOFT – ERC Proof of Concept grant (November 24th, 2020)
Non-volatility is the main physical feature that fast memories, such as SRAM, are still lacking. Such memories could increase computing performance while reducing significantly the power consumption. The only viable option for sub-ns nonvolatile memory ... - Unveiling the heart of magnetic memory cells thanks to electron holography (November 10th, 2020)
Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower ...
