Spintec has developed a strong expertise in the fields of temperature-dependent magnetic and transport properties, sub-nanosecond magnetization dynamics, high frequency noise and near field magnetic probing. The laboratory is equipped with numerous experimental set-ups, whether home made or commercial, which allow characterizing any system from the laboratory sample to the wafer-level test device. Pictures show some of our experimental set-ups.
Vibrating Sample Magnetometer
Dynamic Magnetoresistance Measurement Set-up
Magneto-Optical Kerr Effect
Wafers tester under magnetic field
DC+RF probe tester
Automatic Wafers tester under magnetic field
- Designing magnetic memory with improved retention and writability (April 08th, 2022)
Magnetic Random Access Memory recently started to be commercialized by all main microelectronics factories. In MRAM, the information is coded via parallel or antiparallel magnetic configurations to represent ones and zeroes. The technology is intrinsically ...
- Biocompatible magnetic microparticles for cancer cells destruction (February 04th, 2022)
We present a new type of biocompatible surface-functionalized magnetic microparticles for cancer cells destruction. The magnetite particles, covered with polyethylene glycol molecules, are shown to favor cell-death via apoptosis when set into vibrations by alternating ...
- A new spintronic memristive component for neuromorphic circuits (November 18th, 2021)
Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses ...
- Unveiling the heart of magnetic memory cells thanks to electron holography (November 10th, 2020)
Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower ...
- Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020)
MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy ...