Overview

The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.

Research directions

Perpendicular Anisotropy Materials

High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM

Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

Nanofabrication Challenges

Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.

Perpendicular Shape Anisotropy

A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.

The team

BIAGI Marco

PhD student

CAPRIATA Corrado

Post-doc

DIENY Bernard

Research scientist

GARELLO Kevin

Research scientist

KARAOUI Hanna

PhD student

KOMURO Kosuke

Internship student

MARTIN RIO Sergi

PhD student

PHAN Nhat Tan

PhD student

PREJBEANU Lucian

Research scientist

SENAPATI Kintali Subham

PhD student

SOUSA Ricardo

Research scientist

TRINH Quoc Trung

PhD student

Recent news

• Deterministic switching in Voltage Controlled Magnetic Anisotropy Magnetic at Cryogenic Temperatures (January 22nd, 2024)
  Cryoelectronics has the potential to become important in high-performance computing applications and in the context of quantum computing. For low-temperature operation, it becomes imperative to reduce power dissipation, and improved device efficiency could even offset ...
  
• PhD Defense – All-optical switching of spintronic devices (January 12th, 2024)
  On Wednesday January 31th, at 10:00, David Salomoni (SPINTEC) will defend (in english) his PhD thesis entitled : All-optical switching of spintronic devices Place : IRIG/SPINTEC, CEA Building 10.05, auditorium 445 (access needs authorization request it before ...
  
• PhD Defense – Magnetic Memories Optimized for Cryoelectronic Operation (November 16th, 2023)
  On Monday December 04th, at 14:00, Pedro Brandao Veiga (SPINTEC) will defend his PhD thesis entitled : Magnetic Memories Optimized for Cryoelectronic Operation   Place : IRIG/SPINTEC, Amphithéâtre Daniel Dautreppe, Bâtiment B, CEA – 17 rue des Martyrs ...
  
• In plane reorientation induced single laser pulse magnetization reversal (October 27th, 2023)
  We demonstrate that single pulse all optical helicity independent switching can be generalized for a large range of rare earth–transition metal multilayers. The threshold fluence for switching is observed to be independent of the pulse ...
  
• Spiking neuron based on magnetic tunnel junction with dual free layer (October 27th, 2023)
  We demonstrate that a perpendicular magnetic tunnel junction (MTJ) is capable of emulating an artificial spiked neuron. The magnetic stack has been designed so that the MTJ has two free layers, whose magnetization can be ...
  

• <<
• 1
• 2
• 3
• 4
• 5
• 6
• 7
...
• 28
• >>

Publications