The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.
Perpendicular Shape Anisotropy
A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- J. Ranier Roiz (2015-2016)
- Nikita Strelkov (2016-2019)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jyotirmoy CHATTERGEE (2014-2017)
- Hieu Tan NGUYEN (2013-2016)
- Antoine Chavent (2013-2015)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Radboud Universiteit, Neijmegen, Netherlands
- Review – Spin-orbit torque switching of magnetic tunnel junctions for memory applications (August 03rd, 2022)
Viola Krizakova, Manu Perumkunnil, Sebastien Couet, Pietro Gambardella, Kevin Garello, J. Magn. Magn. Mater. (2022). In this Review, the phenomenon of spin-orbit torques (SOT) is reviewed, from the fundamentals to prospects for applications. Spin-orbit torques (SOT) provide ...
- PEPR Electronics – Priority Programs and Equipment for Research (July 29th, 2022)
SPINTEC involved in the PEPR electronics recently funded by the French government in the framework of the national France 2030 strategy On July 12, 2022, the President of the Republic presented in Crolles the ...
- PEPR SPIN – Priority Programs and Equipment for Exploratory Research (July 29th, 2022)
France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and ...
- Two years post-doctoral position on modelling of all optical switching using light carrying orbital momentum (June 23rd, 2022)
SPINTEC is opening a 2-year post-doctoral position on modelling of all optical switching using light carrying orbital momentum Context: The manipulation of magnetization by ps or fs light pulses has become a very exciting topic nowadays ...
- Seminar – Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory (June 20th, 2022)
On Thursday, July 7 at 14:00 we have the pleasure to welcome Dr. Tiffany SANTOS from Western Digital Corporation, CA, USA. She is 2022 IEEE Magnetics Society Distinguished Lecturer and will give us a seminar ...