A COMPACT MODEL OF PRECESSIONAL SPIN-TRANSFER SWITCHING FOR MTJ WITH A PERPENDICULAR POLARIZER

A. Mejdoubi, G. Prenat, and B. Dieny

Magnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with precessional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL).

PDF - 270.2 kb

 


Copyright © 2015 - Spintec.fr - OXIWIZ - Privacy Policy

Scroll to Top