Fabrication et tests de points mémoire non-volatile à base de jonctions tunnel magnétiques, Monso, Sandra, 191 (2003)

Mémoire magnétique à jonction tunnel magnétique et procédé pour son écriture, Dieny, B., R.C. Sousa and D. Stanescu (2003)

Support d’enregistrement magnétique multiniveaux, Baltz, V., B. Dieny and B. Rodmacq (2003)

Injection of spin-polarized current into semiconductor, Vedyaev, A., Dieny, B., Ryzhanova, N., Zhukov, I.A., Zhuravlev, M.Ye., Lutz, H.O., Journal of Magnetism and Magnetic Materials, 258, 77 (2003)

Precessional switching of the magnetization in microscopic magnetic tunnel junctions, Schumacher, H.W., Chappert, C., Sousa, R.C., Freitas, P., Miltat, J., Ferré, J., Journal of Applied Physics, 93, 7290 (2003)

Crossovers from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation, Rodmacq, B., Auffret, S., Dieny, B., Monso, S., Boyer, P., Journal of Applied Physics, 93, 7513 (2003)

Magnetic characterisation of Ni triangular elements prepared by nanosphere lithography, Glaczynska, H., Ebels, U., Rybczynski, J., Kandulski, W., Giersig, M., 104, 337 (2003)

Anodic oxidation of p, Gelloz, B., Halimaoui, A., Campidelli, Y., Bsiesy, A., Koshida, N., Herino, R., 197, 123 (2003)

Exchange-biased spin valves with perpendicular magnetic anisotropy based on (Co/Pt) multilayers, Garcia, F., Fettar, F., Auffret, S., Rodmacq, B., Dieny, B., Journal of Applied Physics, 93, 8397 (2003)

Nano-structuring of silicon and porous silicon by photo-etching using near field optics, Diesinger, H., Bsiesy, A., Herino, R., 197, 561 (2003)