J. Hérault, M. Souza, Y. Hadj-Larbi, M-T. Delaye, R. Sousa, L. Prejbeanu, B. Dieny
Spin transfer torque (STT) switching in magnetic random access memories (MRAM) is the most power efficient method to write information in MRAM cell. It requires a constant critical current density for writing resulting in lower write currents as the cell size shrinks. Spintec extended the thermally assisted concept to STT switching. For the first time exchange pinned storage layers were reversed by STT current. Thermal assistance can also be used in new concepts, e.g. in per- pendicular magnetization cells reducing the STT critical current density below the industry goal of 106 A/cm².