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ALL NEWS News archives


L’Usine Nouvelle met la spintronique à l’honneur

L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]

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Post-doctoral position – Current induced dynamics of the magnetic skyrmions

Spintec invites application for postdoctoral positions in spintronics on magnetic skyrmions. Magnetic skyrmions are nm scale topological spin texture that hold great promise for storing and manipulating the information at the nanoscale. Spintec has recently demonstrated magnetic skyrmions at room temperature in ultrathin nanostructures [1] and their manipulation using gate electric field[2,3], electric current [4] […]

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Post-doctoral position – Spintronic devices based on magnetic skyrmions

Design of memory and logic devices based on magnetic skyrmions Spintec invites applications for a postdoctoral fellowship on the design of memory and logic devices based on magnetic skyrmions. Magnetic skyrmions are topological spin textures that show great promise for storing and manipulating information at the nanoscale. Logic and memory devices have recently been proposed […]

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LATEST PUBLICATIONS Publications archives


Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

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Spin accumulation dynamics in spintronic devices in the terahertz regime

Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]

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Detection of Heating and Photocurrent attacks using Hybrid CMOS/STT-MRAM

Integrated Circuits (ICs) have to be protected against threatening environmental radiations and malicious perturbations. A large panel of countermeasures have been developed to answer the needs of this challenging field. This work proposes an innovative sensor to detect both photoelectrical injections and thermal perturbations aiming a circuit. This architecture is designated by “Dual Detection of […]

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