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ALL NEWS News archives


Post-doctoral position in spintronics on magnetic skyrmions

The recent discovery of nanometer-size whirling magnetic structures named magnetic skyrmions has opened a new path to manipulate magnetization at the nanoscale [1,2]. Magnetic skyrmions are characterized by a chiral and topologically non-trivial spin structure, i.e their magnetization texture cannot be continuously transformed into the uniform magnetic state without causing a singularity (see Fig.1). Skyrmions […]

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Seminar : Spin Transport in Metallic Antiferromagnets IrMn

On April 23, we have the pleasure to welcome Yan Wen from King Abdullah University of Science and Technology (KAUST), Saudi Arabia. He makes actually his PHD supervised by Xixiang Zhang in collaboration with Aurélien Manchon. He will give us a seminar which will take place at SPINTEC 434A at 14:00. Spin Transport in Metallic […]

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Magnetics Chapter wins prize for IEEE French Chapter 2018

The French Magnetics Chapter of the IEEE Society was prized the “Chapter of year 2018” by the French section of the IEEE Society. Spintec is largely involved in this Chapter with Bernard Diény as President, Vincent Baltz as Secretary, Mairbek Chshiev as Treasurer. The prize comes as a recognition of its fulfillment of objectives, and […]

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LATEST PUBLICATIONS Publications archives


Editor – Topical issue in MRS bulletin: Advanced memory—Materials for a new era of information technology

Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density and high-performance memory in […]

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Review – Antiferromagnetic spintronics

V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, and Y. Tserkovnyak, Rev. Mod. Phys. 90, 015005 (2018) Spintronics utilizing antiferromagnetic materials has potential for the next generation of applications and offers opportunities for new ideas. Ultimately, antiferromagnets could replace ferromagnets as the active spin-dependent element on which spintronic devices are based. Central to […]

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Sub-10nm thermally stable Perpendicular Shape Anisotropy STT-MRAM realized at SPINTEC

A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]

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