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ALL NEWS News archives


Seminar : Various ways to tune non-collinear magnetism in ultrathin films

On February, 13, we have the pleasure to welcome Aurore FINCO, from university of Hamburg in Spintec. At 13H30, she will give a seminar in room 434 A. Various ways to tune non-collinear magnetism in ultrathin films In order to develop spintronic devices, a precise control of the magnetic state in ultrathin films is necessary. […]

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Seminar : Magnetisation manipulation with light and electrons femto-second pulses

On March 29, We have the pleasure to welcome Stéphane MANGIN from Institut Jean Lamour, Université de Lorraine. He comes at Grenoble for the PHD defense of Jyotirmoy Chatterjee at 14H. He kindly offered to take this opportunity to give us a seminar which will take place at SPINTEC room 434A at 11:00 Since the […]

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Seminar : Shapeable microelectronics

On March, 27, we have the pleasure to welcome Daniil KARNAUSHENKO, from Institute for Integrative Nanosciences, Institute for Solid State and Materials Research Dresden (IFW Dresden), Germany in Spintec. At 11H00, he will give a seminar in room 434 A. Shapeable microelectronics Shape is a noticeable quantity in nature, which does not persist. Role of […]

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LATEST PUBLICATIONS Publications archives


Giant magnetoresistance in lateral metallic nanostructures for spintronic applications

This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]

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Le point sur la Spintronique

[In French] Article “Le point sur la Spintronique” dans le magazine de la recherche et de ses applications Les Défis du CEA Octobre 2017 N°221.

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Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode of pMTJ stack highly robust against annealing up to […]

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