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ALL NEWS News archives


Seminar : The Hall Effects Edwin Hall Never Imagined

On September, 28, we will have the pleasure to welcome Xiaofeng Jin from Fudan University, China in Spintec. At 11H, we will give his IEEE Distinguished lecture on “The Hall Effects Edwin Hall Never Imagined” in Spintec, bat 10.05, room 434 A. The anomalous Hall effect (AHE) is one of the oldest and most prominent […]

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Seminar : Voltage-Control Spintronics Memory having potentials for high-speed and high-density applications with ultralow energy consumption

On September 28, we have the pleasure to welcome Dr H.Yoda from Toshiba in Spintec. At 14 H, in room 434 A, he will give a seminar on Voltage-Control Spintronics Memory having potentials for high-speed and high-density applications with ultralow energy consumption.

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Habilitation defense : Modelling of spintronic devices: from basic operation mechanisms toward optimization

On Friday, the 06th Of October 2017 at 13h30, Liliana BUDA-PREJBEANU from DRF/INAC/SPINTEC, will defend her HDR (has the Ability to Supervise Research) entitled “Modelling of spintronic devices: from basic operation mechanisms toward optimization” Place : Amphithéâtre Z108 de Phelma MINATEC, 3 Parvis Louis Néel – 38000 GRENOBLE Nowadays the spintronic related phenomena are widely […]

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LATEST PUBLICATIONS Publications archives


A skyrmion switch

Nanoscale magnetic skyrmions are good candidates for data manipulation and storage in spintronic applications (logic and/or memory). M. Schott et al. have recently shown that a gate voltage can nucleate or annihilate skyrmions. This proof of concept of a skyrmion switch paves the way towards skyrmion-based applications. Skyrmions are chiral magnetic bubbles: their magnetic texture, […]

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Book – Introduction to Random-Access Memory

B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]

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Electrical detection of magnetic domain walls by inverse and direct spin Hall effect

Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

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