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L’Usine Nouvelle met la spintronique à l’honneur
L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]
Read morePost-doctoral position – Current induced dynamics of the magnetic skyrmions
Spintec invites application for postdoctoral positions in spintronics on magnetic skyrmions. Magnetic skyrmions are nm scale topological spin texture that hold great promise for storing and manipulating the information at the nanoscale. Spintec has recently demonstrated magnetic skyrmions at room temperature in ultrathin nanostructures [1] and their manipulation using gate electric field[2,3], electric current [4] […]
Read morePost-doctoral position – Spintronic devices based on magnetic skyrmions
Design of memory and logic devices based on magnetic skyrmions Spintec invites applications for a postdoctoral fellowship on the design of memory and logic devices based on magnetic skyrmions. Magnetic skyrmions are topological spin textures that show great promise for storing and manipulating information at the nanoscale. Logic and memory devices have recently been proposed […]
Read moreLATEST PUBLICATIONS Publications archives
Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy
MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]
Read moreSpin accumulation dynamics in spintronic devices in the terahertz regime
Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]
Read moreDetection of Heating and Photocurrent attacks using Hybrid CMOS/STT-MRAM
Integrated Circuits (ICs) have to be protected against threatening environmental radiations and malicious perturbations. A large panel of countermeasures have been developed to answer the needs of this challenging field. This work proposes an innovative sensor to detect both photoelectrical injections and thermal perturbations aiming a circuit. This architecture is designated by “Dual Detection of […]
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RECENT UPDATES
- Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy 1 April 2020
- L’Usine Nouvelle met la spintronique à l’honneur 28 March 2020
- Spin accumulation dynamics in spintronic devices in the terahertz regime 26 March 2020
- Detection of Heating and Photocurrent attacks using Hybrid CMOS/STT-MRAM 26 March 2020
- Post-doctoral position – Current induced dynamics of the magnetic skyrmions 26 March 2020
