Selected publications (2016 onwards)
Sub-nanosecond precessional switching in a MRAM cell with a perpendicular polarizer (January 01st, 2012)
Sub-nanosecond precessional switching in a MRAM cell with a perpendicular polarizer, Marins de Castro Souza, M., B. Lacoste, R.C. Sousa, T. Devolder, L.D. Buda-Prejbeanu, A. Chavent, A. Mejdoubi, S. Auffret, U. Ebels, C. Ducruet, I.L. Prejbeanu, L. Vila, B. Rodmacq and B. Dieny, , 6213651 (2012)
Read moreRoom temperature magnetoresistance in CoFeB/SrTiO (January 01st, 2012)
Room temperature magnetoresistance in CoFeB/SrTiO, Hassen, E., Viala, B., Cyrille, M.-C., Cartier, M., Redon, O., Lima, P., Belhadji, B., Yang, H.X., Velev, J., Chshiev, M., Journal of Applied Physics, 111, 07C727 (2012)
Read moreRadiation-hardened LUT for MRAM-based FPGAs (January 01st, 2012)
Radiation-hardened LUT for MRAM-based FPGAs, Gonçalves, O., Prenat, G., Dieny, B., , 33 (2012)
Read moreExtended scalability and functionalities of MRAM based on thermally-assisted writing (January 01st, 2012)
Extended scalability and functionalities of MRAM based on thermally-assisted writing, Dieny, B., R.C. Sousa, S. Bandiera, M. Marins de Castro Souza, S. Auffret, B. Rodmacq, J.-P. Nozières, J. Alvarez-Hérault, E. Gapihan, I.L. Prejbeanu, C. Ducruet, C. Portemont, K. Mackay and B. Cambou, 1.3.1 (2012)
Read moreA hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits (January 01st, 2012)
A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits, Di Pendina, G., Prenat, G., Dieny, B., Torki, K., Journal of Applied Physics, 111, 07E350 (2012)
Read moreImpact of resistive-bridge defects in TAS-MRAM architectures (January 01st, 2012)
Impact of resistive-bridge defects in TAS-MRAM architectures, Azevedo, J., Virazel, A., Bosio, A., Dilillo, L., Girard, P., Todri, A., Prenat, G., Alvarez-Hérault, J., Mackay, K., , 125 (2012)
Read moreImpact of resistive-open defects on the heat current of TAS-MRAM architectures (January 01st, 2012)
Impact of resistive-open defects on the heat current of TAS-MRAM architectures, Azevedo, J., A. Virazel, A. Bosio, L. Dilillo, P. Girard, A. Todri, G. Prenat, J. Alvarez-Hérault and K. Mackay, , 532 (2012)
Read moreCoupling-based resistive-open defects in TAS-MRAM architectures (January 01st, 2012)
Coupling-based resistive-open defects in TAS-MRAM architectures, Azevedo, J., A. Virazel, A. Bosio, L. Dilillo, P. Girard, A. Todri, G. Prenat, J. Alvarez-Hérault and K. Mackay, , 6233034 (2012)
Read moreBarrier breakdown mechanisms in MgO-based magnetic tunnel junctions under pulsed conditions (January 01st, 2012)
Barrier breakdown mechanisms in MgO-based magnetic tunnel junctions under pulsed conditions, Amara-Dababi, S., Béa, H., Sousa, R.C., Dieny, B., , 6213653 (2012)
Read moreBarrier breakdown mechanisms in MgO-based magnetic tunnel junctions under pulsed conditions and correlation with low-frequency noise (January 01st, 2012)
Barrier breakdown mechanisms in MgO-based magnetic tunnel junctions under pulsed conditions and correlation with low-frequency noise, Amara-Dababi, S., Béa, H., Sousa, R.C., Baraduc, C., Mackay, K., Dieny, B., 8461, 84610G (2012)
Read more