We have the pleasure to welcome Cécile Grezes, Electrical Engineering department, UCLA, Los Angeles. She will give us a seminar entitled :
Magnetic tunnel junctions using voltage control of the magnetic anisotropy for electric-field-controlled MRAM
Building on the advances of magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) [1], a number of device proposals have emerged to overcome its limitations and expand its application areas. [read more]
