Developing materials, stacks and processes for ultimate non volatile memories.

CROCUS Technology, Grenoble, France
Groupe de physique des matériaux, Rouen, France
Institut Néel, Grenoble, France
L_SIM, Grenoble, France
ICREA, Barcelona, Spain
IMDEA, Madrid, Spain

CROCUS Technology

Understanding and mastering exchange bias properties and their distributions in magnetoresistive sensors for ultrahigh density recording (>1Tbit/in²) and in sub-20 nm magnetic tunnel junctions for non volatile memories.

Latest results
Characterizing and tuning bimodal distributions of exchange bias blocking temperatures for poly- and single- crystals.
Characterizing finite size effects on exchange bias and its variability on arrays of deeply submicronic ferromagnetic/antiferromagnetic nanodots.
Interpreting the observed results by atomistic simulations.

Vincent Baltz, Hélène Béa, Bernard Dieny, Gilles Gaudin, Isabelle Joumard, Stéphane Auffret
PhD Students : Kamil Akmaldinov, Giovanni Vinai

Related content
V. Baltz, B. Rodmacq, A. Zarefy, L. Lechevallier, and B. Dieny, Phys. Rev. B 81, 052404 (2010) – Bimodal distribution of blocking temperature in exchange bias ferromagnetic/antiferromagnetic bilayers

C. K. Safeer, M. Chamfrault, J. Allibe, C. Carretero, C. Deranlot, E. Jacquet, J.-F. Jacquot, M. Bibes, A. Barthélémy, B. Dieny, H. Béa, and V. Baltz , Appl. Phys. Lett. 100, 072402 (2012) – Anisotropic bimodal distribution of blocking temperature with multiferroic BiFeO3 epitaxial thin films

G. Vinai, J. Moritz, G. Gaudin, J. Vogel, M. Bonfim, F. Lançon, I. L. Prejbeanu, K. Mackay, and B.Dieny, submitted (2012) – Magnetic properties of patterned arrays of exchange biased IrMn/Co square dots

Figure 1

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(left) Array of patterned Co/Pt/IrMn nanodots.
(right) Distribution of blocking temperature in Co/Pt/IrMn for various thickness of Pt inserted layer.

Figure 2

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Atomistic simulations of magnetic configuration at remanence in IrMn/Co square nanodots of various lateral dimensions and for various Co thicknesses


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