Scientific highlights illustrated by key publications
- Electrically-induced luminescence quenching in p (January 01st, 2003)
Electrically-induced luminescence quenching in p, Gelloz, B., Bsiesy, A., Herino, R., Journal of Applied Physics, 94, 2381 (2003) - Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers (January 01st, 2003)
Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers, Garcia, F., Sort, J., Rodmacq, B., Auffret, S., Dieny, B., Applied Physics Letters, 83, 3537 (2003) - Increase in ferromagnetic/antiferromagnetic exchange bias due to a reduction of the interfacial exchange interaction (January 01st, 2003)
Increase in ferromagnetic/antiferromagnetic exchange bias due to a reduction of the interfacial exchange interaction, Ernult, F., Dieny, B., Billard, L., Lançon, F., Regnard, J.-R., Journal of Applied Physics, 94, 6678 (2003) - A comparison of surface segregation for two semi-Heusler alloys: TiCoSb and NiMnSb (January 01st, 2003)
A comparison of surface segregation for two semi-Heusler alloys: TiCoSb and NiMnSb, Caruso, A.N., Borca, C.N., Ristoiu, D., Nozières, J.-P., Dowben, P.A., Surface Science, 525, L109 (2003) - Field-dependent exchange coupling in NiO/Co bilayers (January 01st, 2003)
Field-dependent exchange coupling in NiO/Co bilayers, Camarero, J., Pennec, Y., Vogel, J., Pizzini, S., Cartier, M., Fettar, F., Ernult, F., Tagliaferri, A., Brookes, N.B., Dieny, B., Physical Review B, 67, 020413 (2003) - Perpendicular interlayer coupling in Ni (January 01st, 2003)
Perpendicular interlayer coupling in Ni, Camarero, J., Pennec, Y., Vogel, J., Bonfim, M., Pizzini, S., Ernult, F., Fettar, F., Garcia, F., Lançon, F., Billard, L., Dieny, B., Tagliaferri, A., Brookes, N.B., Physical Review Letters, 91, ... - Injection of spin-polarized current into semiconductor (January 01st, 2003)
Injection of spin-polarized current into semiconductor, Vedyaev, A., Dieny, B., Ryzhanova, N., Zhukov, I.A., Zhuravlev, M.Ye., Lutz, H.O., Journal of Magnetism and Magnetic Materials, 258, 77 (2003) - Precessional switching of the magnetization in microscopic magnetic tunnel junctions (January 01st, 2003)
Precessional switching of the magnetization in microscopic magnetic tunnel junctions, Schumacher, H.W., Chappert, C., Sousa, R.C., Freitas, P., Miltat, J., Ferré, J., Journal of Applied Physics, 93, 7290 (2003) - Crossovers from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation (January 01st, 2003)
Crossovers from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation, Rodmacq, B., Auffret, S., Dieny, B., Monso, S., Boyer, P., Journal of Applied Physics, 93, 7513 ... - Magnetic characterisation of Ni triangular elements prepared by nanosphere lithography (January 01st, 2003)
Magnetic characterisation of Ni triangular elements prepared by nanosphere lithography, Glaczynska, H., Ebels, U., Rybczynski, J., Kandulski, W., Giersig, M., 104, 337 (2003) - Anodic oxidation of p (January 01st, 2003)
Anodic oxidation of p, Gelloz, B., Halimaoui, A., Campidelli, Y., Bsiesy, A., Koshida, N., Herino, R., 197, 123 (2003) - Exchange-biased spin valves with perpendicular magnetic anisotropy based on (Co/Pt) multilayers (January 01st, 2003)
Exchange-biased spin valves with perpendicular magnetic anisotropy based on (Co/Pt) multilayers, Garcia, F., Fettar, F., Auffret, S., Rodmacq, B., Dieny, B., Journal of Applied Physics, 93, 8397 (2003) - Nano-structuring of silicon and porous silicon by photo-etching using near field optics (January 01st, 2003)
Nano-structuring of silicon and porous silicon by photo-etching using near field optics, Diesinger, H., Bsiesy, A., Herino, R., 197, 561 (2003) - Effects of swift heavy ion bombardment on magnetic tunnel junction functional properties (January 01st, 2003)
Effects of swift heavy ion bombardment on magnetic tunnel junction functional properties, Conraux, Y., Nozières, J.-P., da Costa, V., Toulemonde, M., Ounadjela, K., Journal of Applied Physics, 93, 7301 (2003) - Les MRAMS ont recours à la thermique (January 01st, 2003)
Les MRAMS ont recours à la thermique, Sousa, R.C., La feuille rouge du DRFMC, 494 (2003)
