M. Kerekes, C. Papusoi, C. Ducruet, O. Redon, R. Sousa, L. Prejbeanu, B. Dieny

Magnetic random access memories (MRAM) have been the first attempt to realize a Spintronics based technology. The information is stored in the relative orientation of two magnetic layers and the readout is obtained from the resistance of a magnetic tunnel junction. SPINTEC pioneered the thermally assisted approach to write the information which is funda- mentally different from all proposed concepts. A current flow through the junction is used to heat the cell above a thresh- old temperature enabling the storage of information. The advantages are an error free selection process, simplified memory cell and lower power consumption with better thermal stability.


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