The purpose of this WP is twofold.
The first purpose is benchmark the performance of these CMOS/MTJ based circuits with those of CMOS-only circuits of similar functionalities. This work is still in progress but some initial results on CMOS/MTJ based microprocessor derived from RISK processor have already been obtained in WP4: Design of low-power hybrid CMOS/Magnetic circuits. 50% to 85% of energy savings thanks to the CMOS/MTJ technology have been reported in WP4.
The second purpose of this WP is to contribute reducing the cultural gap between microelectronics and magnetism communities by reciprocal educational actions (joint symposia, tutorials, summer schools, edition of introductory books…).
Along this line, an annual “Introductory course on MRAM” (InMRAM) has been launched and already took place in July 2013 and July 2014. A 3rd edition is scheduled for 1st-3rd July 2015. This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of MRAMs.
Publications associated with WP6 :
Thermally assisted MRAMs: Ultimate scalability and logic functionalitiesPrejbeanu, I.L., S. Bandiera, J. Alvarez-Hérault, R.C. Sousa, B. Dieny and J.-P. Nozières Journal of Physics D: Applied Physics 46 (2013) 070301http://dx.doi.org/10.1088/0022-3727…
Emerging non-volatile memories: Magnetic and resistive technologies
Dieny, B. and C. Jagadish
Journal of Physics D: Applied Physics 46 (2013) 070301
Extended scalability and functionalities of MRAM based on thermally-assisted writing
Dieny, B., R.C. Sousa, S. Bandiera, M. Marins de Castro Souza, S. Auffret, B. Rodmacq, J.-P. Nozières, J. Hérault, E. Gapihan, I.L. Prejbeanu, C. Ducruet, C. Portemont, K. Mackay and B. Cambou
Proceedings of the 2011 International Electron Devices Meeting (2012) 1.3.1
Magnetic logic functionalities and scalability of thermally-assisted MRAMs
Prejbeanu, I.L., R.C. Sousa, B. Dieny, J.-P. Nozières, S. Bandiera and K. Mackay
Proceedings of the 12th Low Voltage-Low Power Conference (2013) 6577786
MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling
Sousa, R.C., S. Bandiera, M. Marins de Castro Souza, B. Lacoste, L. San Emeterio Alvarez, L.E. Nistor, S. Auffret, U. Ebels, C. Ducruet, I.L. Prejbeanu, L. Vila, B. Rodmacq and B. Dieny
Proceedings of the International Semiconductor Conference Dresden-Grenoble (2013)
MRAM with soft reference layer: In-stack combination of memory and logic functions
Stainer, Q., L. Lombard, K. Mackay, R.C. Sousa, I.L. Prejbeanu and B. Dieny
Proceedings of the 5th IEEE International Memory Workshop (2013) 84
Magnetic Random Access Memories Dieny, B., R.C. Sousa, J.-P. Nozières, O. Redon and I.L. Prejbeanu Nanoelectronics and Information Technology, Wiley-VCH, (2011)
Handbook of Magnetic Materials – Vol.19, edited by K.H.J.Buschow, Elsevier
Chapter “Spintronic Devices for Memory and Logic Applications”
B. Dieny, R.C. Sousa, J. Herault, C. Papusoi, G. Prenat, U. Ebels, D. Houssameddine1, B. Rodmacq, S. Auffret, L. Prejbeanu-Buda, M.C. Cyrille, B. Delaet, O. Redon, C. Ducruet, J.P. Nozieres and L. Prejbeanu.
ISSN 1567-2719, DOI: 10.1016/S1567-2719(11)19002-2
InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engineers
Di Pendina, G. ; Prenat, G. ; Dieny, B.
Proceedings of the 10th European Workshop on Microelectronics Education (2014) 21
The 2014 magnetism roadmap
Stamps, R.L. ; Breitkreutz, S. ; Akerman, J. ; Chumak, A.V. ; Otani, Y. ; Bauer, G.E.W. ; Thiele, J.-U. ; Bowen, M. ; Majetich, S.A. ; Klaui, M. ; Prejbeanu, I.L. ; Dieny, B. ; Dempsey, N.M. ; Hillebrands, B.
Journal of Physics D: Applied Physics 47 (2014) 333001