Chapter — Magnetic nanowires and nanotubes (April 14th, 2018)
Michal Stano, Olivier Fruchart, Magnetic nanowires and nanotubes, pp.155-267, in Handbook of Magnetism and Magnetic Materials 27, E. Brück Ed (2018). DOI: 10.1016/bs.hmm.2018.08.002 We propose a review of the current knowledge about the synthesis, magnetic properties and applications of magnetic cylindrical nanowires and nanotubes. By nano we consider diameters reasonably smaller than a micrometer. At […]
Read moreEditor – Topical issue in MRS bulletin: Advanced memory—Materials for a new era of information technology (April 10th, 2018)
Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. View online: DOI: 10.1557/mrs.2018.96 Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density […]
Read moreReview – Antiferromagnetic spintronics (March 12th, 2018)
V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, and Y. Tserkovnyak, Rev. Mod. Phys. 90, 015005 (2018) Spintronics utilizing antiferromagnetic materials has potential for the next generation of applications and offers opportunities for new ideas. Ultimately, antiferromagnets could replace ferromagnets as the active spin-dependent element on which spintronic devices are based. Central to […]
Read moreBook – Introduction to Random-Access Memory (September 01st, 2017)
B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]
Read moreReview – Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (June 28th, 2017)
B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]
Read moreReview – Three-dimensional nanomagnetism (April 20th, 2017)
Amalio Fernandez-Pacheco, Robert Streubel, Olivier Fruchart, Riccardo Hertel, Peter Fischer, Russell P. Cowburn, Nature Comm. 8, 15756 (2017) Magnetic nanostructures are being developed for use in many aspects of our daily life, spanning areas such as data storage, sensing and biomedicine. Whereas patterned nanomagnets are traditionally two-dimensional planar structures, recent work is expanding nanomagnetism into […]
Read moreEditor – Proceedings of the IEEE, Special issue on Spintronics (October 01st, 2016)
Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny
Read moreChapter — Spintronic phenomena: Giant Magnetoresistance, Tunnel Magnetoresistance and Spin transfer torque (January 01st, 2013)
C. Baraduc, M. Chshiev, B. Dieny, in Giant Magnetoresistance (GMR) Sensors From Basis to State-of-the-Art Applications, C. Reig, S. Cardoso de Freitas, S. Chandra Mukhopadhyay Eds., Smart Sensors, Measurement and Instrumentation vol.6, Springer (2013). Abstract This introduction to spintronic phenomena deals with the three major physical effects of this research field: giant magnetoresistance, tunnel magnetoresistance […]
Read moreMagnetic Random Access Memories (January 01st, 2011)
B. Dieny, R.C. Sousa, J.P. Nozières, O. Redon, I.L. Prejbeanu, Magnetic Random Access Memories (Ch.28), in Nanoelectronic and Information Technology, R. Waser Ed., Wiley-VCH (2011). ISBN: 978-3-527-40927-3. Spinelectronics is a rapidly expanding area of research and development which merges magnetism and electronics (See Chapter 4 for insights on the related basics). Since the discovery of […]
Read moreChapter — Spintronic devices for memory and logic applications (January 01st, 2011)
B. Dieny, R.C. Sousa, J. Alvarez-Hérault, C. Papusoi, G. Prenat, U. Ebels, D. Houssameddine, B. Rodmacq, S. Auffret, L.D. Buda-Prejbeanu, M.C. Cyrille, B. Delaët, O. Redon, C. Ducruet, J.P. Nozières, I.L. Prejbeanu, Spintronic devices for memory and logic applications, in Handbook of Magnetic Materials, vol. 19, 107 (2011) Spinelectronics is a very rapidly expanding area […]
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