B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]

On Monday, the 18th Of September 2017 at 14h00, Jérémy LOPES from DRF/INAC/SPINTEC, will defend his PhD thesis entitled “Design of an Innovative Asynchronous, Non-Volatile Integrated Circuit for Space Applications” Place : LIRMM, 161 rue Ada 34095 Montpellier, salle de séminaire du LIRMM </span style=”color:#FF0000″> Today, there are several ways to develop microelectronic circuits adapted […]

On september, 21, we have the pleasure to welcome Amalio Fernández-Pacheco from Cavendish Laboratory, University of Cambridge in Spintec. At 11H, in room 434 A, he will give a seminar entitled “Advanced fabrication and characterisation of three-dimensional magnetic nanowires for applications in spintronics”. Three-dimensional nanomagnetism is an exciting new area of research [1], with potential […]

Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

GeTe has been predicted to be the father compound of a new class of multifunctional materials: ferroelectric Rashba semiconductors. In that sense, they are expected to display a coupling between spin-dependent k-splitting and ferroelectricity, thus allowing an electrical control of spin-to-charge conversion phenomena in spintronics. This paper reported the epitaxial growth of Fe/GeTe(111) heterostructures by […]

Overview The objective of the project is to combine all key ingredients for modern Spintronics and SpinOrbitronics modeling within a novel and original non-commercial multi-physics software. These key ingredients are the appropriate spin transport equations that are easy-implementable in a numerical solver, the simultaneous resolution of the spin-dependent transport and magnetization dynamics, and finally the […]

The ANR project OISO (OxIde-based SpinOrbitronics) explores the potential of transition metal oxide (TMO) perovskites for SpinOrbitronics. SpinOrbitronics exploits the spin-orbit coupling (SOC) to obtain spin currents without ferromagnets (FM), more efficient torques to switch magnetization and reduced heat dissipation for low power scalable devices. TMO constitute a material platform of structurally well-matched compounds including […]

The medal of innovation of CNRS is granted yearly to one or a few persons having conducted ground-breaking research, which led to key innovation in technology, life or social sectors. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in the technological, therapeutic or societal fields. Jean-Pierre […]

In the frame of our ELECSPIN ANR project [1], we have an open position for a 12 months post-doc position. ELECSPIN project aims at developing spintronics devices based on manipulating magnetic properties by an electric field in oxides/ferromagnetic metal structures. The goal is to develop electric field assisted spin-transfer torque magnetic random access memories (STT-MRAM) […]

Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]