THEORY / SIMULATION



Research team Theory/Simulation, within the Concepts group


Our colleague Mairbek Chshiev, professor at the University Grenoble Alpes, was appointed Senior Member of the Institut Universitaire de France (IUF) beginning from October 1, 2020 for a period of five years. The IUF distinguishes each year a small number of university professors for their research excellence and international recognition, providing theses members additional support […]

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Topological insulators (TI) represent a new class of insulating materials hosting metallic surface states. Moreover, those surface states exhibit a Dirac cone energy dispersion where the strong spin-orbit coupling leads to a helical spin texture at the Fermi level. This property can be exploited to detect spin currents in conventional semiconductors like silicon or germanium. […]

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This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

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daniel.solis.lerma

On Wednesday May 13, 2020 at 14h Daniel SOLIS LERMA from SPINTEC will defend his PhD thesis entitled : Proximity-induced transport phenomena in graphene-based spintronic devices Place : the defense (public) will take place by video-conference. Contact us to have the link (mair.chshiev@cea.fr) Abstract: In this thesis we present a study of transport properties of […]

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MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

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Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]

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A possibility of controlling electronic and magnetic properties of graphene via proximity of multiferroic substrate is demonstrated. Coupling graphene to a multiferroic oxide (bismuth ferrite) give rise to novel class of spin-dependent transport phenomena based on multiferroic-induced proximity effects in graphene. Based on these findings, a concept of multi-resistive device in lateral geometry is proposed. […]

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The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]

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First-principles calculations of electronic structure and transport properties of 2D materials-based magnetic nanostructures Applications are invited for a postdoctoral position at SPINTEC Lab in the area of of theoretcial investigations of electronic structure and transport properties of magnetic nanostructures comprising magnetic metals, insulators, graphene and other 2D materials in the scope of 2D spintronics developments. […]

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On December 20th at 11:00, we have the pleasure to welcome Dr. Yaroslav Kvashnin from Uppsala University who will give a seminar at CEA/SPINTEC, Bat 1005, room 445, entitled : Magnetic interactions and excitations from first principles Magnetization dynamics on the nanoscale can be well described by Landau-Lifshitz(-Gilbert) equation of motion. If properly parameterized, it […]

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