Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They are of immediate relevance for low-power and high-speed processor and mass-storage cache memory. Similar to other technologies, ways are being searched to design three-dimensional devices and thus allow long-term scalability in terms of areal density.
The scalability of single Magnetic Random Access Memory (MRAM) cells below 10nm lateral size has been demonstrated in the lab recently, independently at SPINTEC and at Tohoku university. The purpose of the PhD project is to pave the way towards integration of this concept in a viable technological process, compatible with high areal density and mass production. The principle relies on filling semiconductor vertical interconnects with a magnetic material, to be used as a storage cell. The first steps will consist in the structural, magnetic and electric characterization of such interconnects. This will then be extended to a designing and investigating a fully functional memory cell, addressing both fundamental and technological challenges.
This topic is a joint action between Spintec and CEA-LETI/DTSI for the fabrication of damascene structures with a 3D shape anisotropy.
The topic is funded by CEA, with a monthly gross salary of 2040€. The candidate will benefit from CEA workers conditions, such as subsidized local transportation, sporting activities etc.
If you are interested in this topic, please contact Lucian PREJBEANU or Olivier FRUCHART at SPINTEC. Applications must include a CV, motivation and recommendation letters. Applicants must have a taste for experimental physics and collaborative work, display understanding of condensed matter physics and have computer skills. The position start in October 2019.