MRAM



Research team MRAM memories, within the Devices group


On Tuesday May 14, 2024 at 14:00 we have the pleasure to welcome Prof. Stephan ROCHE (ICREA, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST). He will give us a seminar entitled: Ten Years of 2D Materials based Spintronics Research: Highlights and Future Place: Salle G-1A002 Amphi Ampère, Bâtiment GreEn-ER, 21 Avenue des Martyrs, […]

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We study recurrent networks of binary stochastic Magnetic Tunnel Junctions (sMTJ), aiming at efficiently solving computationally hard optimization problems. After validating a prototyping route, we investigate the impact of hybrid CMOS+MTJ building block variants on the quality of stochastic sampling, a key feature for optimum search in a complex landscape. We carry out a functional […]

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Cryoelectronics has the potential to become important in high-performance computing applications and in the context of quantum computing. For low-temperature operation, it becomes imperative to reduce power dissipation, and improved device efficiency could even offset the power consumption required for cooling. In magnetic memories, voltage-controlled magnetic anisotropy (VCMA) is a promising approach to minimize the […]

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On Wednesday January 31th, at 10:00, David Salomoni (SPINTEC) will defend (in english) his PhD thesis entitled : All-optical switching of spintronic devices Place : IRIG/SPINTEC, CEA Building 10.05, auditorium 445 (access needs authorization request it before January 20th to admin.spintec@cea.fr) visio conference : https://grenoble-inp.zoom.us/j/95554920195 Abstract : The evolution of computer memory has led to […]

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On Monday December 04th, at 14:00, Pedro Brandao Veiga (SPINTEC) will defend his PhD thesis entitled : Magnetic Memories Optimized for Cryoelectronic Operation   Place : IRIG/SPINTEC, Amphithéâtre Daniel Dautreppe, Bâtiment B, CEA – 17 rue des Martyrs – Grenoble (access needs authorization request it before November 23th to admin.spintec@cea.fr) visio conference : https://univ-grenoble-alpes-fr.zoom.us/j/97427688514?pwd=aEt6RjZwdlFORktlWjNUTVM5K0lBQT09 Pass […]

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We demonstrate that single pulse all optical helicity independent switching can be generalized for a large range of rare earth–transition metal multilayers. The threshold fluence for switching is observed to be independent of the pulse duration and, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features […]

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We demonstrate that a perpendicular magnetic tunnel junction (MTJ) is capable of emulating an artificial spiked neuron. The magnetic stack has been designed so that the MTJ has two free layers, whose magnetization can be driven in a windmill-like dynamic by the spin transfer torque. The output-spiking rate is tunable by the dc bias voltage. […]

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Spintec laboratory is opening a up-to three years engineer researcher position in the framework of the PEPR electronics (part of France 2030 strategy) – project EMCOM (emerging memories for computing).   Context: The cost of transferring information between different layers of storage and computing units now domi-nates the energy performance of conventional processors. This has […]

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On Friday October 13th, at 14:00, M. Nuno CACOILO will defend his PhD thesis entitled : Fundamentals of ultrascaled 3D magnetic tunnel junctions and integration routes for high density memory arrays Place : SPINTEC, CEA Building 10.05, auditorium 445 (access needs authorization *) ZOOM link : https://univ-grenoble-alpes-fr.zoom.us/j/5115826964 Abstract : The perpendicular Spin Transfer Torque Magnetic […]

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Le ministère de l’enseignement supérieur et de la recherche a dressé le portrait de plusieurs lauréats ERC en France. Bernard Dieny, chercheur en électronique de spin à SPINTEC dans l’équipe MRAM, est l’un d’entre eux. Le domaine d’expertise de Bernard Dieny couvre un large spectre qui va de la recherche fondamentale en nanomagnétisme et en […]

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