MRAM



Research team MRAM memories, within the Devices group


Perpendicular anisotropy Magnetic Random Access Memory (MRAM) can contribute reduced power consumption in electronic circuits. These spintronic devices also rely on materials like Co, Pt and Ru, having associated supply risk or environmental impact. A sustainability analysis of these devices shows, that the impact of the wafer substrate is much larger than that of the […]

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Atomistic spin simulations have been carried out to study the probability of all-optical switching of [Tb/Co] multilayered thin films. Playing with the composition of the sample, the material parameters and the fluence of the laser pulse we have shown the possibility to get single-shot all-optical switching. Since the first experimental observation of all-optical switching phenomena, […]

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Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is nonvolatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Here, an alternative design of tunnel junctions comprising FeCoFe|MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) is proposed, leveraging the interfacial PMA […]

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UFO – An ANR project

UFO stands for UltraFast Opto-magneto-spintronics for Futur Nanotechnologies. UltraFast Opto-magneto-spintronics is an emerging field of research that combines the ideas and concepts of magneto-optics and opto-magnetism with spin transport phenomena, supplemented with the possibilities offered by photonics for ultrafast low-dissipative manipulation and transport of information. Both light and spin currents can control magnetic order, though […]

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CRYMCO – An ANR project

The goal of project CRYMCO is to optimize MRAM cell concepts for operation in cryogenic temperature environments. The project will explore applications for storage in conventional and quantum information processing. In the first case, MRAM with low energy dissipation for cryogenic environments could result in power savings by operating at low temperature, when the cost/power […]

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SpinSpike – An ANR project

SpinSpike stands for Spintronic Spiking Neurons. It is a 42-month-long ANR project (2021/2024). Spintronics has recently shown its promise for neuromorphic computing, but is lacking an essential ingredient of biological neural networks: spiking neurons. In this context, the objective of SpinSpike project is to explore novel approaches of spiking neurons using magnetic tunnel junctions. Building […]

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The research highlights of SPINTEC over the year 2020 have been put together, and are available to download: http://www.spintec.fr/spintec-annual-booklets. This booklet contains the key facts of the lab over the period (contracts, new staff etc.), the most up-to-date description of the lab activity and the research teams. We wish you a nice reading!

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In the frame of the French national ANR project SpinSpike, Spintec laboratory is opening a postdoctoral researcher position. The candidate will work in collaboration with UMPhy CNRS-Thales and Thales TRT. The objective is the realization of proof-of-concept magnetic tunnel junction based artificial spiking neurons able to generate spikes and propagate them between coupled artificial neurons. […]

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marco.mansueto

On Thursday, December 17, 2020 at 13H30, Marco Mansueto will defend his PhD entitled: Memristive magnetic memory for spintronic synapses Video conference: https://grenoble-inp.zoom.us/j/96102161721 [Meeting ID : 961 0216 1721; Passcode : MM] Abstract : In the context of a technological era in which the amount of data is exponentially increasing, the development of brain-inspired softwares […]

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Recent progress in nanotechnology has led to the development of spin-torque nano-oscillators (STNO), whose time constants, due to their nano-scale size, are naturally of the order of 1-100 nanoseconds. At SPINTEC we demonstrated experimentally for the first time that the use of such STNOs in swept-tuned microwave spectrum analyzers leads to a substantial reduction of […]

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