MRAM



Research team MRAM memories, within the Devices group


Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

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This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memory called MRAMs (Magnetic Random Access Memory) based on magnetic tunnel junctions. MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) are attracting an increasing interest […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2022. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

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This study investigates heavy-ion irradiation effects on Perpendicular Magnetic Anisotropy Spin-Transfer Torque Magnetic Tunnel Junction devices (p-STT-MTJs). The radiative campaign took place at the Cyclotron Resource Centre of Université Catholique de Louvain (UCL).   Designers of space systems have to deal with ensuring complex data processing, while obtaining, at the same time, a proper level […]

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Using a macrospin approach, we carried out a systematic analysis of the role of the voltage controlled magnetic anisotropy on the magnetization dynamics of nanostructures with out-of-plane magnetic anisotropy. Diagrams of the magnetization switching have been computed depending on the material and experiment parameters thus allowing predictive sets of parameters for optimum switching experiments. Voltage […]

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NeuSPIN – An ANR project

NeuSPIN stands for Design of a reliable edge neuromorphic system based on spintronics for Green AI. Current computing architectures with separate processing and memory blocks are not ideal for energy-efficient learning and inference processing for AI on the edge concept. For AI edge applications, it is envisioned that classical von Neumann computing will be replaced […]

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Q. Shao, P. Li, L. Liu, H. Yang, S. Fukami, A. Razavi, H. Wu, K. Wang, F. Freimuth, Y. Mokrousov, M. D. Stiles, S. Emori, A. Hoffmann, J. Åkerman, K. Roy, J.-P. Wang, S.-H. Yang, K. Garello, W. Zhang, IEEE Transactions on Magnetics, doi: 10.1109/TMAG.2021.3078583. Spin-orbit torque (SOT) is an emerging technology that enables the […]

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Perpendicular anisotropy Magnetic Random Access Memory (MRAM) can contribute reduced power consumption in electronic circuits. These spintronic devices also rely on materials like Co, Pt and Ru, having associated supply risk or environmental impact. A sustainability analysis of these devices shows, that the impact of the wafer substrate is much larger than that of the […]

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Atomistic spin simulations have been carried out to study the probability of all-optical switching of [Tb/Co] multilayered thin films. Playing with the composition of the sample, the material parameters and the fluence of the laser pulse we have shown the possibility to get single-shot all-optical switching. Since the first experimental observation of all-optical switching phenomena, […]

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Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is nonvolatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Here, an alternative design of tunnel junctions comprising FeCoFe|MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) is proposed, leveraging the interfacial PMA […]

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