MRAM



Research team MRAM memories, within the Devices group


You find here the list of proposals for Master-2 internships to take place during Spring 2019. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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On Friday 31 Aug, Nicolas PERRISSIN defends his PhD at 14h00 in room M001 of Grenoble INP – Phelma – 3 Parvis Louis Néel – Grenoble. Keywords: STT MRAM, perpendicular shape anisotropy, Ultimate scalability Most of the actual STT-MRAM development effort is nowadays focused on out-of-plane magnetized MTJ taking advantage of the perpendicular magnetic anisotropy […]

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A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]

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Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. View online: DOI: 10.1557/mrs.2018.96 Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density […]

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L’alliance de la microélectronique et du magnétisme, ou spintronique, s’avère prometteuse. Les géants du secteur s’intéressent notamment aux mémoires magnétiques. Industrie et Technologies 1007, 1st March 2018 [French]

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A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]

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On March 29, We have the pleasure to welcome Stéphane MANGIN from Institut Jean Lamour, Université de Lorraine. He comes at Grenoble for the PHD defense of Jyotirmoy Chatterjee at 14H. He kindly offered to take this opportunity to give us a seminar which will take place at SPINTEC room 434A at 11:00 Since the […]

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IEDM is the main annual conference of the IEEE Electron Devices Society. It took place in San Francisco, 4-6 December 2017. Since 2016, IEEE EDS and IEEE Magnetics Society have been collaborating on the organization of joint events gathering experts in microelectronics and magnetism. With the rising interest of the microelectronics industry for the emerging […]

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On December 4,  we have the pleasure to welcome Marwan Deb from Université de Lorraine, France. At 11H, he will give a seminar on “Ultrafast Magnetization Manipulation in Multisublattice Magnets” in room 434A. Femtomagnetism is a relatively new and rapidly growing area of research that focuses on the ultrafast magnetization dynamics driven by fs laser […]

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The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode of pMTJ stack highly robust against annealing up to […]

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