MRAM



Research team MRAM memories, within the Devices group


You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

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B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]

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The medal of innovation of CNRS is granted yearly to one or a few persons having conducted ground-breaking research, which led to key innovation in technology, life or social sectors. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in the technological, therapeutic or societal fields. Jean-Pierre […]

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In the frame of our ELECSPIN ANR project [1], we have an open position for a 12 months post-doc position. ELECSPIN project aims at developing spintronics devices based on manipulating magnetic properties by an electric field in oxides/ferromagnetic metal structures. The goal is to develop electric field assisted spin-transfer torque magnetic random access memories (STT-MRAM) […]

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on July, 12th, 14H, Steven Lequeux from Spintec, will give a seminar on “Neuromorphic computing : From a memristive device to the learning process”. The seminar will take place in Building 10.05, room 434. In the current context of information technology, the sequential processing carried out by classical computer architectures stumbles on problems of energy […]

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B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]

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Nearly twenty scientists from SPINTEC participated in Intermag Dublin (24-28 April 2017), among which two thirds were PhD students and post-docs. Paul Noël was awarded a session poster prize (Large and tunable spin Hall angles in Au-based alloys: from intrinsic to side jump contributions), while Jyotirmoy Chatterjee was one of the five finalists for the […]

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In the frame of our H2020 project GREAT we have one open position for a postdoc or term contract for 18 months to characterize the spin transfer torque induced magnetic switching as well as rf excitations of perpendicular magnetic tunnel junction devices (pMTJs) with the aim to demonstrate the dual functionality for memory and microwave […]

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HProbe is the latest spin-off company from SPINTEC, based on our expertise in MRAM research at the wafer scale. HProbe offers a 3D magnetic field wafer-level electrical tester for all types of MRAM (STT, SOT, OST, …), planar and perpendicular MTJ, magnetic sensors etc. The tester embed all standard procedures for testing and analyzing devices. […]

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Misalign to write faster

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

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