MRAM



Research team MRAM memories, within the Devices group


In the frame of the French national ANR project SpinSpike, Spintec laboratory is opening a postdoctoral researcher position. The candidate will work in collaboration with UMPhy CNRS-Thales and Thales TRT. The objective is the realization of proof-of-concept magnetic tunnel junction based artificial spiking neurons able to generate spikes and propagate them between coupled artificial neurons. […]

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marco.mansueto

On Thursday, December 17, 2020 at 13H30, Marco Mansueto will defend his PhD entitled: Memristive magnetic memory for spintronic synapses Video conference: https://grenoble-inp.zoom.us/j/96102161721 [Meeting ID : 961 0216 1721; Passcode : MM] Abstract : In the context of a technological era in which the amount of data is exponentially increasing, the development of brain-inspired softwares […]

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Recent progress in nanotechnology has led to the development of spin-torque nano-oscillators (STNO), whose time constants, due to their nano-scale size, are naturally of the order of 1-100 nanoseconds. At SPINTEC we demonstrated experimentally for the first time that the use of such STNOs in swept-tuned microwave spectrum analyzers leads to a substantial reduction of […]

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Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

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ERC Proof of Concept grant MAGALIGN is awarded in the framework of ERC Project MAGICAL The launching of a new generation of spintronic memory (STT-MRAM) in volume production in 2019 by all major microelectronics companies marks the adoption of spintronics by microelectronics industry. This constitutes a major milestone in the field. SPINTEC largely contributed to […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2021. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship. You may download the […]

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We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]

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The European consortium SpintronicFactory, largely supported by the French laboratories Spintec (Grenoble) and the CNRS-Thales Joint Lab (Palaiseau), publishes in the journal Nature Electronics an ambitious roadmap for spintronics. This discipline on the borderline between magnetism and microelectronics is indeed reaching maturity, offering broad prospects for innovation. B. Dieny, I. L. Prejbeanu, K. Garello, P. […]

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Kevin GARELLO joins SPINTEC

We are pleased to announce the arrival on June 2, 2020 of Kevin Garello at SPINTEC. Kevin comes from IMEC Belgium, where he was in charge of exploratory magnetic memory activities, being in addition the leader of spintronic work package for Graphene Flagship. Within the MRAM team, Kevin will bring his vision and know-how of […]

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This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

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