Research team MRAM memories, within the Devices group
Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces (August 30th, 2022)
A recent breakthrough in understanding the thermal effects on the magnetic properties of perpendicularly magnetized Fe/MgO interfaces is reported. It turns out that the macroscopic mechanisms play a decisive role in determining the thermal stability of magnetization in such structures. The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces(TM/Ox) is a key element in […]
Read moreReview – Two-dimensional materials prospects for non-volatile spintronic memories (August 17th, 2022)
H. Yang✉, S. O. Valenzuela✉, M. Chshiev, S. Couet, B. Dieny, B. Dlubak, A. Fert, K. Garello, M. Jamet, D.-E. Jeong, K. Lee, T. Lee, M.-B. Martin, G. S. Kar, P. Sénéor, H.-J. Shin, S. Roche✉, Nature 606, 663 (2022). In this Perspective article, an overview of the current developments and challenges in regard […]
Read more[POSITION FILLED] Post-doctoral position (August 04th, 2022)
Context: In the frame of different European and French national projects, SPINTEC has several openings for postdoctoral positions. The projects consider memory, microwave and sensor functionalities to develop novel hardware concepts for unconventional computing, to demonstrate wireless communications applications and to develop novel concepts for wide-range magnetic field sensors. Position: The tasks include nanofabrication of […]
Read moreReview – Spin-orbit torque switching of magnetic tunnel junctions for memory applications (August 03rd, 2022)
Viola Krizakova, Manu Perumkunnil, Sebastien Couet, Pietro Gambardella, Kevin Garello, J. Magn. Magn. Mater. (2022). In this Review, the phenomenon of spin-orbit torques (SOT) is reviewed, from the fundamentals to prospects for applications. Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading […]
Read morePEPR Electronics – Priority Programs and Equipment for Research (July 29th, 2022)
SPINTEC involved in the PEPR electronics recently funded by the French government in the framework of the national France 2030 strategy On July 12, 2022, the President of the Republic presented in Crolles the France 2030 national investment strategy for the electronics sector. France 2030 will dedicate more than 5 billion euros to support the […]
Read morePEPR SPIN – Priority Programs and Equipment for Exploratory Research (July 29th, 2022)
France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]
Read moreTwo years post-doctoral position on modelling of all optical switching using light carrying orbital momentum (June 23rd, 2022)
SPINTEC is opening a 2-year post-doctoral position on modelling of all optical switching using light carrying orbital momentum Context: The manipulation of magnetization by ps or fs light pulses has become a very exciting topic nowadays opening routes towards ultrafast magnetization control. To date, most of the light-spin interaction studies made use of spin angular […]
Read moreSeminar – Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory (June 20th, 2022)
On Thursday, July 7 at 14:00 we have the pleasure to welcome Dr. Tiffany SANTOS from Western Digital Corporation, CA, USA. She is 2022 IEEE Magnetics Society Distinguished Lecturer and will give us a seminar entitled : Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory Place: SPINTEC, CEA/IRIG, Bat. 10.05, Room 445 Zoom […]
Read moreOn Tuesday, June 7th at 14:00, M. Alvaro PALOMINO will defend his PhD thesis entitled: Spintronic devices with reduced content of Platinum and Ruthenium Place : CEA Bat. 10.05 Room 445 Zoom link https://univ-grenoble-alpes-fr.zoom.us/j/9618654716?pwd=MFNPYXRyU1N0R282d3lOYUovWm1HQT09 See access conditions at the end Abstract : In the field of information and communication technologies (ICT), the development of non-volatile memories […]
Read moreDesigning magnetic memory with improved retention and writability (April 08th, 2022)
Magnetic Random Access Memory recently started to be commercialized by all main microelectronics factories. In MRAM, the information is coded via parallel or antiparallel magnetic configurations to represent ones and zeroes. The technology is intrinsically nonvolatile, meaning it can keep information without being electrically powered. However, nonvolatility often comes with a trade-off between the information […]
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