Radiation robust circuit design for harsh environments like space is a big challenge for IC design and embedded systems. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically. Spintec proposed a novel integrated circuit structure that enable to increase to increase the robustness […]

Nanoscale magnetic skyrmions are good candidates for data manipulation and storage in spintronic applications (logic and/or memory). M. Schott et al. have recently shown that a gate voltage can nucleate or annihilate skyrmions. This proof of concept of a skyrmion switch paves the way towards skyrmion-based applications. Skyrmions are chiral magnetic bubbles: their magnetic texture, […]

On September, 28, we will have the pleasure to welcome Xiaofeng Jin from Fudan University, China in Spintec. At 11H, we will give his IEEE Distinguished lecture on “The Hall Effects Edwin Hall Never Imagined” in Spintec, bat 10.05, room 434 A. The anomalous Hall effect (AHE) is one of the oldest and most prominent […]

On September 28, we have the pleasure to welcome Dr H.Yoda from Toshiba in Spintec. At 14 H, in room 434 A, he will give a seminar on Voltage-Control Spintronics Memory having potentials for high-speed and high-density applications with ultralow energy consumption.

On Friday, the 06th Of October 2017 at 13h30, Liliana BUDA-PREJBEANU from DRF/INAC/SPINTEC, will defend her HDR (has the Ability to Supervise Research) entitled “Modelling of spintronic devices: from basic operation mechanisms toward optimization” Place : Amphithéâtre Z108 de Phelma MINATEC, 3 Parvis Louis Néel – 38000 GRENOBLE</span style=”color:#FF0000″> Nowadays the spintronic related phenomena are […]

B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]

On Monday, the 18th Of September 2017 at 14h00, Jérémy LOPES from DRF/INAC/SPINTEC, will defend his PhD thesis entitled “Design of an Innovative Asynchronous, Non-Volatile Integrated Circuit for Space Applications” Place : LIRMM, 161 rue Ada 34095 Montpellier, salle de séminaire du LIRMM </span style=”color:#FF0000″> Today, there are several ways to develop microelectronic circuits adapted […]

On september, 21, we have the pleasure to welcome Amalio Fernández-Pacheco from Cavendish Laboratory, University of Cambridge in Spintec. At 11H, in room 434 A, he will give a seminar entitled “Advanced fabrication and characterisation of three-dimensional magnetic nanowires for applications in spintronics”. Three-dimensional nanomagnetism is an exciting new area of research [1], with potential […]

Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

GeTe has been predicted to be the father compound of a new class of multifunctional materials: ferroelectric Rashba semiconductors. In that sense, they are expected to display a coupling between spin-dependent k-splitting and ferroelectricity, thus allowing an electrical control of spin-to-charge conversion phenomena in spintronics. This paper reported the epitaxial growth of Fe/GeTe(111) heterostructures by […]