French projects



Major National contractual projects involving SPINTEC


CONTRABASS – An ANR project

CONTRABASS stands for Ferroelectric control of Rashba states, a 42 months ANR project starting in December 2020. Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. Combined with high spin-orbit coupling elements, ferroelectrics have also a […]

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MATHEEIAS stands for MAgneto-THermo-Electric Effects In Antiferromagnetic Spintronics. It is a 48 months collaborative international project co-funded by the French ANR and the German DFG. The project relies on the following consortium: SPINTEC Grenoble, CINAM Marseille, TUD Dresden / Uni. Konstanz, and JGU Mainz, in close collaboration with FZU & Charles Uni. Prague. The aim […]

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MILF – An ANR project

MILF stands for Magnetic Imaging at Low dimensions & high Frequencies. It is a 36-month-long early-carrier ANR project. Magnetic events such as domain reversal, domain wall propagation and vortex oscillations are fast processes, broad source of spintronic applications. However, it remains extremely challenging to scrutinize the inner structure of such magnetic objects during their motion, […]

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NV-APROC – An ANR project

NV-APROC stands for Non Volatile MRAM-based Asynchronous PROCessor, a 42-month ANR project starting on October 2019, coordinated by Spintec. Micro and nano electronics integrated circuit domain has been strongly driven by the advent of the Internet of Things (IoT). The constraints become very strong, especially in terms of power consumption and autonomy. Therefore there is […]

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MISTRAL – An ANR project

MISTRAL stands for MRAM/CMOS Hybridization to Secure Cryptographic Algorithms, an 42-month ANR project starting on October 2019, coordinated by EMSE (Ecole des Mines de St Etienne in Gardanne). MISTRAL is addressing the security of the cryptography embedded in connected objects at its highest standards while keeping concern by the energy footprint. Consequently, MISTRAL aims at […]

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ADMIS – An ANR project

A very exciting field of research has recently been devoted to magnetic skyrmions: they are potential candidates to overcome the power consumption problems of the conventional microelectronic Von Neuman architectures where memory and logic functions are physically separated. Thanks to their small size, high mobility under current, they have been proposed to be used in […]

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C3DS – An ANR-DFG project

C3DS stands for Chemistry for three-dimensional Spintronics, and is a 36-month ANR-DFG project (2019-2022). Spintronics has become a mature technology for applications, such as magnetic field sensing and solid-state memories. However, it is almost exclusively based on planar processes such as thin film deposition and patterning. Extending spintronics to 3D devices would provide new integrated […]

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SPINNET – An ANR project

Overview SPINNET stands for Microwave SPINtronics for Wireless Sensor NETworks. It is a 42-month-long ANR project. Wireless sensor networks WSN are a key technology of the Internet of things (IoT) that couples physical infrastructures with Information and Communication Technologies (ICT). Nowadays, sensors are everywhere, in vehicles, in habitat, in smart phones, in factories or in […]

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FEOrgSpin – An ANR Project

Overview FEOrgSpin project has been accepted in the framework of AAPG ANR 2018 call. This collaborative research project aims to expand current knowledge on ferroelectric control of spin polarization at different spinterfaces comprising ferromagnets (FM) and ferroelectric (FE) organic materials in order to develop novel functionalities of organic spintronics devices. The main objectives of the […]

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MAGICVALLEY – An ANR project

MAGICVALLEY stands for MAGnetism InduCed VALLEY polarization in large scale 2D materials (2018-2022). Objectives In the monolayer limit, two dimensional (2D) transition metal dichalcogenides (2H-MX2, with M=Mo, W and X=S, Se) are semiconductors with a sizeable (1-2 eV) and direct electronic bandgap as well as (degenerate) valleys at the K+/K- corners of the Brillouin zone. […]

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