Research team Topological spintronics, within the Concepts group
Seminar – Topological spintronics (November 20th, 2018)
On november 28, We have the pleasure to welcome Bertrand Dupé from INSPIRE Group, Institute of Physics, Johannes Gutenberg University Mainz, Germany. He will give us a seminar at 11:00, CEA/Spintec, Bat. 1005, room 434A entitled : Topological spintronics Surfaces and interfaces can host a wide range of physical phenomena: changes of chemical potential or […]
Read moreTOCHA – A FETPROACTIVE project at SPINTEC (October 30th, 2018)
Tocha for Dissipationless topological channels for information transfer and quantum metrology, is a Research and Innovation Action FETPROACTIVE project funded by the European Commission. The goal of TOCHA, a five years project head by Sergio O. Valenzuela from ICN2, Barcelona, and for which Spintec is partner, is to develop the next generation of topological devices […]
Read moreIFW – SPINTEC collaborative workshop (October 14th, 2018)
SPINTEC laboratory and IFW-Dresden have agreed to strengthen their ties through an international collaborative agreement. This takes the so-called form of an International Associated Lab (LIA), supported by both CNRS and the Leibniz Society. Although the formal agreement enters into force on January 1st 2019 only, our two laboratories are already engaged actively in collaborative […]
Read moreMasters thesis projects for Spring 2019 (October 10th, 2018)
You find here the list of proposals for Master-2 internships to take place during Spring 2019. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]
Read moreHighly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer (October 03rd, 2018)
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates. Conventional spintronics is based upon the use of magnetic materials to […]
Read morePaul Noel, laureate of a best poster prize at JMC 2018 (September 18th, 2018)
Paul Noel was among the 7 laureates of a best poster prize at the Journée de la Matière Condensée, the french conference on condensed matter, held for its 16th edition, at the end of August 2018 in Grenoble. Congratulation to him! The title of his poster was: Highly efficient spin-to-charge current conversion at room temperature in […]
Read moreSub-10nm thermally stable Perpendicular Shape Anisotropy magnetic memory (August 24th, 2018)
A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]
Read moreNonlinear properties of pure spin conductors (June 21st, 2018)
N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. Ben Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, and O. Klein, Phys. Rev. B 97, 060409 (2018). N. Thiery, V. V. […]
Read moreSub-10nm thermally stable Perpendicular Shape Anisotropy STT-MRAM realized at SPINTEC (March 08th, 2018)
A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]
Read moreGiant magnetoresistance in lateral metallic nanostructures for spintronic applications (January 22nd, 2018)
This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]
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