TOPOLOGICAL SPINTRONICS



Research team Topological spintronics, within the Concepts group


A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]

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N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. Ben Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, and O. Klein, Phys. Rev. B 97, 060409 (2018). N. Thiery, V. V. […]

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A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]

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This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]

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On Wednesday, the 15th Of November 2017 at 10h00, Gilles ZAHND from DRF/INAC/SPINTEC, will defend his PhD thesis entitled “Spin accumulation effects and magnetoresistance effects in lateral nanostructures” Place : Amphitheater from CNRS building A-3rd floor – 25 rue des Martyrs, Grenoble Spintronics is mainly based on the phenomenon of spin accumulation, which is inherent […]

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Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

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GeTe has been predicted to be the father compound of a new class of multifunctional materials: ferroelectric Rashba semiconductors. In that sense, they are expected to display a coupling between spin-dependent k-splitting and ferroelectricity, thus allowing an electrical control of spin-to-charge conversion phenomena in spintronics. This paper reported the epitaxial growth of Fe/GeTe(111) heterostructures by […]

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OISO – An ANR project

The ANR project OISO (OxIde-based SpinOrbitronics) explores the potential of transition metal oxide (TMO) perovskites for SpinOrbitronics. SpinOrbitronics exploits the spin-orbit coupling (SOC) to obtain spin currents without ferromagnets (FM), more efficient torques to switch magnetization and reduced heat dissipation for low power scalable devices. TMO constitute a material platform of structurally well-matched compounds including […]

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On Friday, the 12th Of May 2017 at 10h00, Van Tuong PHAM from UGA (DRF/INAC/SPINTEC), will defend his PhD thesis entitled “Ferromagnetic/nonmagnetic nanostructures for the electrical measurement of the spin Hall effect and the detection of domain walls” Place : Amphithéâtre du CNRS bâtiment A-3ème étage – 25 rue des Martyrs, Grenoble Spin−orbitronics is based […]

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At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in amplitude and sign by an electrostatic gate, a premiere. […]

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