Spin-orbit torques (SOTs) have the potential to manipulate magnetization using in-plane current, and two-dimensional electron gases (2DEGs) provide a highly efficient spin-to-charge current interconversion. This paper reports the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG.   We recently reported a significant progress in the path towards a next generation of memory devices […]

Théo FROTTIER is among Best Poster Award winners at INTERMAG 2023 Conference taking place in May 2023 in Sendai, Japan. The title of the poster prepared with Aurélie KANDAZOGLOU, Cécile GREZES of Topological Spintronics team is “Non-Volatile Electric-Field Control of Spin-Orbit Torques and Anomalous Hall Effect in Perpendicular Ferromagnet-SrTiO3 systems”. The presented results clearly show […]

Y. Fu, J. Li, J. Papin, P. Noël, S. Teresi, M. Cosset-Chéneau, C. Grezes, T. Guillet, C. Thomas, Y.-M. Niquet, P. Ballet, T. Meunier, J.-P. Attané, A. Fert, and L. Vila, Nano Lett. 22, 7867 (2022).   We report the observation of this bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that […]

You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2023. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]

Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. This makes ferroelectrics good candidates for ultralow-power neuromorphic AI architectures. We recently demonstrated in a Nature article […]

France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]

F. Trier, P. Noël, J.-V. Kim, J.-Ph. Attané, L. Vila & M. Bibes✉, Nature Reviews Materials 7, 258 (2022).   In this Review, the recent advances in the new field of oxide spin-orbitronics including the control of spin–orbit-driven effects by ferroelectricity are surveyed, and the future perspectives for the field are discussed. Oxide materials possess […]

The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. Spintronics could potentially […]

Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]