THEORY / SIMULATION



Research team Theory/Simulation, within the Concepts group


MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

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Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]

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A possibility of controlling electronic and magnetic properties of graphene via proximity of multiferroic substrate is demonstrated. Coupling graphene to a multiferroic oxide (bismuth ferrite) give rise to novel class of spin-dependent transport phenomena based on multiferroic-induced proximity effects in graphene. Based on these findings, a concept of multi-resistive device in lateral geometry is proposed. […]

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The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]

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First-principles calculations of electronic structure and transport properties of 2D materials-based magnetic nanostructures Applications are invited for a postdoctoral position at SPINTEC Lab in the area of of theoretcial investigations of electronic structure and transport properties of magnetic nanostructures comprising magnetic metals, insulators, graphene and other 2D materials in the scope of 2D spintronics developments. […]

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On December 20th at 11:00, we have the pleasure to welcome Dr. Yaroslav Kvashnin from Uppsala University who will give a seminar at CEA/SPINTEC, Bat 1005, room 445, entitled : Magnetic interactions and excitations from first principles Magnetization dynamics on the nanoscale can be well described by Landau-Lifshitz(-Gilbert) equation of motion. If properly parameterized, it […]

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Domain-wall motion in one-dimensional conduits is both a textbook case for magnetization dynamics and the understanding of spin torques, and of practical importance for the design of novel spintronic ICT devices. However, instabilities known as Walker breakdown limit the speed in most cases. We have shown experimentally and confirmed by simulation, that these instabilities are […]

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We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2020. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may download the full list of proposals, along with an introduction to the […]

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Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. In this framework, we quantified theoretically the driving force needed for a domain wall to overcome the potential barrier related to modulated diameter geometry in order to jump from one stable position […]

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