Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer (September 02nd, 2015)
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)
Read moreEVADERIS: A new start-up recently launched by SPINTEC (September 01st, 2015)
In the framework of the ERC proof of concept HYMAGINE, a startup company was launched in September 2014. The start-up is named eVaderis, and its main objective is to offer energy efficient control processors that will drastically reduce the overall systems power consumption while keeping high performances and intelligence levels.
Read moreView of the surrounding mountains from Spintec (September 01st, 2015)
Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications (August 31st, 2015)
Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications
Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.
Read moreBand-Edge Noise Spectroscopy of a Magnetic Tunnel Junction (August 30th, 2015)
Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction
We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0
Spintec recrute un CDD INGÉNIEUR PROCÉDÉ POUR LA FABRICATION DE NANODISPOSITIFS D’ÉLECTRONIQUE DE SPIN (July 24th, 2015)
Dans le cadre d’un contrat européen ERC (European Research Council), SPINTEC cherche à recruter un ingénieur procédé qui sera chargé de la fabrication des dispositifs d’électronique de spin pendant toute la durée du contrat.
Read moreSpin orbit effects (July 24th, 2015)
YIG delay lines: Description: Microwave wireless telecommunications are the backbone of the information age. They enable the exchange of data between connected objects. The Internet of Things is expected to connect as much as 80 billion objects by 2020. Accommodating such large number of handsets requires a paradigm shift in the performance of microwave analog […]
Read moreJ. Moritz, V. Baltz, B. Rodmacq, S. Auffret, B. Dieny Bit-patterned media have been proposed as a solution to circumvent the magnetic storage density limitation set by the superparamagnetic limit of conventional granular media. Intense research efforts have been directed towards the devel- opment of economically viable fabrication approaches for such media as well as […]
Read moreSPIN-POLARISED TRANSPORT MECHANISMS AT THE FERROMAGNET/SILICON INTERFACE (July 02nd, 2015)
M. Kanoun, R. Benabderrahmane, C. Duluard, C. Baraduc, N. Bruyant, A. Bsiesy, Carrier transport mechanism across tunnel dielectric barrier separating a ferromagnet from silicon is an important issue for spin-polarised electrons injection into non magnetic semiconductors. Direct tunnelling of electrons between the ferromagnet and the silicon energy bands is a prerequisite for spin conservation through […]
Read moreDOMAIN WALL MOTION IN PERPENDICULAR MAGNETIZED SAMPLES (July 02nd, 2015)
I.-M. Miron, T. Moore, P.-J. Zermatten, G. Serret, S. Auffret, B. Rodmacq, G. Gaudin, A. Schuhl Controlling locally the motion of magnetic domain walls (DW) by a spin polarized current would lead to new applications in spintronics devices. Up to now, it has been mainly studied in materials with in-plane magnetization. However the diffi- culty […]
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