Spintec développe une mémoire STT-MRAM dix fois plus rapide que les produits annoncés pour 2016 chez Samsung ou Intel. Sa vitesse d’écriture est inférieure à la nanoseconde, contre 5 à 10 nanosecondes habituellement. La différence tient au processus de déclenchement du pulse d’écriture. Spintec l’accélère grâce à deux polariseurs d’aimantation orthogonale, placés de part et […]

Bernard Dieny a reçu lors d’une cérémonie annuelle de remise de prix de l’Académie des Sciences le prix “Adrien Constantin de Magny”. La cérémonie s’est déroulée le 13 octobre sous la Coupole de l’Institut de France. Ce prix biennal recompense “un savant dont les travaux pratiques auront paru remarquables à l’Académie”. Toutes nos félicitations à Bernard […]

With the objective to train tomorrow’s researchers in an active and growing research field, SPINTEC proposes every year several (paid) Master projects. The majority of the Master projects will lead over to a PhD thesis project with financial support that comes from a large variety of funding sources, including funding via research institutions (bourse ministère, […]

Les mémoires magnétiques à base de jonctions tunnel magnétiques appelées Spin-Transfer-Torque Random Access Memories (STT-MRAM) suscitent un intérêt considérable pour la micro-électronique grâce à leurs avantages combinés de non-volatilité, densité, vitesse, endurance. Dans ce travail, une nouvelle variété de telles mémoires a été développée offrant une vitesse d’écriture sub-ns appropriée pour les applications de type […]

  Magnetic memories based on magnetic tunnel junctions, called Spin-Transfer-Torque Random Access Memories (STT-MRAM), are stimulating a considerable interest in microelectronics thanks to their combination of assets: non-volatility, density, speed, endurance. In this work, a new flavor of these memories was developed allowing ultrafast (sub-ns) writing suitable for cache SRAM-type of applications.   Spin-transfer-torque (STT) […]

Training by research: doctoral and post doctoral training   Training students and professionals through research is one of the SPINTEC key missions. Ensuring the highest standard of scientific and human management towards the early stage researchers (PhDs and post docs) is a commitment we share within all INAC teams.   SPINTEC students belong to 2 […]

A new H2020 project called GREAT has been funded at the last ICT call! Congratulations to Guillaume Prenat & the team ! Strategic objectives addressed Demonstrate the relevance of the magnetic Multifunctional Standardized Stack (MSS) in a CMOS process for the co-integration of digital, analog and RF IPs using Spin Transfer Torque devices. Investigate, design, develop, and analyze […]

Thematic overview Spintec was originally heavily involved in read heads for disk drive, yet this activity all but vanished due to the strong consolidation of the industry, now with only two players with strong internal R&D capabilities. The technologies used consumer applications sensors remain relatively simple and the industry is extremely conservative, which limits the […]

MRAMs nowadays constitute one of the main areas of application of spin electronics. However, besides the standalone memory application, the same hybrid CMOS/magnetic tunnel junctions (MTJ) technology is also extremely promising in the field of logic and more generally can yield a totally new approach in the way electronic devices are designed. Most CMOS devices […]

Thematic overview   Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies.   […]