Perpendicular-shape-anisotropy magnetic random-access memory (PSA MRAM) has been proposed to maintain the thermal stability of solid-state magnetic bits down to a few nanometers in diameter. Here we confirm directly with high-spatial resolution and high-sensitivity electron holography that magnetization is weakly affected by temperature, in contrast with the conventional ultrathin MRAM cells. Magnetic random-access memory (MRAM) […]

France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]

Magnetic Random Access Memory recently started to be commercialized by all main microelectronics factories. In MRAM, the information is coded via parallel or antiparallel magnetic configurations to represent ones and zeroes. The technology is intrinsically nonvolatile, meaning it can keep information without being electrically powered. However, nonvolatility often comes with a trade-off between the information […]

We present a new type of biocompatible surface-functionalized magnetic microparticles for cancer cells destruction. The magnetite particles, covered with polyethylene glycol molecules, are shown to favor cell-death via apoptosis when set into vibrations by alternating magnetic field.   A team from SPINTEC, in collaboration with researchers from SyMMES, has recently developed a new type of […]

Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]

Hprobe passe à la vitesse supérieure. Après avoir levé 300 000 euros en avril 2018, la start-up issue de SPINTEC et spécialiste du test magnétique de composants semi-conducteurs vient de boucler un deuxième tour de table de 2 millions d’euros. Parmi les investisseurs figurent le fond d’investissement taïwanais ITIC et l’équipementier japonais de production de […]

We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]