2D materials and van der Waals (vdW) heterostructures are promising candidates to build efficient THz spintronic emitters. Here, we demonstrate the drastic modification of THz spintronic emission by inserting a single layer of MoSe2 in the PtSe2/graphene vdW heterostructure. Ab initio calculations indeed show the emergence of Rashba states due to the electronic hybridization between […]

The modulation of THz spintronic emitters represents a real challenge nowadays. Here, we consider a THz emitter made of 2D materials grown by molecular beam epitaxy (MBE) on large area and transferred on LiNbO3. The low dimensional character makes this system sensitive to the ferroelectric polarization of LiNbO3. Using this proximity effect, we demonstrate the […]

Magnetic skyrmions are magnetic nanobubbles which are envisioned as bits of informations in our computers. A team from the Spintec laboratory in Grenoble has demonstrated that they can be moved by electric current at record speeds, up to 900 m/s, in antiferromagnetic stacks. These results hold promise for the use of skyrmions to store and […]

Context: SPINTEC opens a R&D Engineer position for developing magnetic multilayer stacks on a new fully automated ultra-high vacuum sputtering tool for 100 mm wafers, developed in-house. The work will be carried out within the “Materials” team and in a close collaboration with researchers, PhDs and postdoctoral fellows. Position: The mission will consist in: discussing […]

France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]

Magnetic Random Access Memory recently started to be commercialized by all main microelectronics factories. In MRAM, the information is coded via parallel or antiparallel magnetic configurations to represent ones and zeroes. The technology is intrinsically nonvolatile, meaning it can keep information without being electrically powered. However, nonvolatility often comes with a trade-off between the information […]

Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]