Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020)
MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]
Read moreL’Usine Nouvelle met la spintronique à l’honneur (March 28th, 2020)
L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]
Read moreSelf-induced spin-charge conversion in ferromagnetic thin films (February 28th, 2020)
The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]
Read moreHprobe, la pépite française qui veut accélérer le test de mémoires et capteurs magnétiques (February 04th, 2020)
Hprobe passe à la vitesse supérieure. Après avoir levé 300 000 euros en avril 2018, la start-up issue de SPINTEC et spécialiste du test magnétique de composants semi-conducteurs vient de boucler un deuxième tour de table de 2 millions d’euros. Parmi les investisseurs figurent le fond d’investissement taïwanais ITIC et l’équipementier japonais de production de […]
Read moreSpintronic memristor based on an isotropically coercive magnetic layer (December 03rd, 2019)
We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]
Read moreImpact of eddy currents in nanostructures destined for use in spintronics (September 11th, 2019)
In the field of spintronics, ferromagnetic/non-magnetic metallic multilayers are core building blocks for emerging technologies. Resonance experiments using stripline transducers are commonly used to characterize and engineer these stacks for applications. Here, we investigated the incompletely understood impact of eddy currents below the microwave magnetic skin-depth and explained the lineshape asymmetry and phase lags reported […]
Read moreMagnetic control of optical responses of biocompatible magneto-elastic membranes (August 29th, 2019)
Numerous studies investigated the use of synthetic membranes for photonic or biomedical applications. We report here on a recent type of biocompatible magnetically actuated membranes, partly originating from studies on magnetic particles for biology, consisting of PDMS/Au bilayers with embedded arrays of micrometric magnetic pillars. Flat at zero field, concave in an applied magnetic field, […]
Read morePhysicochemical origin of improved MRAM cells with W capping layer (August 20th, 2019)
Increasing the thermal budget beyond 400°C of magnetic random access memory (MRAM) cells is a major goal to allow for seamless conventional electronics integration. At these temperatures significant material diffusion can destroy the interface properties of new generation perpendicular magnetization stacks targeting technology nodes below 20nm. This study highlights the origin in the improvement obtained […]
Read moreA generic probe for spin fluctuations in nanometer-scale films (February 20th, 2019)
In the field of spintronics, which relies on the spin-dependent transport properties of matter, exploring spin fluctuations and phase transitions in ultrathin films is essential as it provides key information to engineer materials for applications. Here, O. Gladii et al investigated the generic character of a novel method to probe spin fluctuations through demonstration with […]
Read moreImpact of heating on the stability phase diagrams of perpendicular MTJs (February 19th, 2019)
Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which contrasts with the theoretically predicted behavior of a standard macrospin-based model. In this paper, we are proposing a modified model […]
Read more