Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer (November 15th, 2017)
The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode of pMTJ stack highly robust against annealing up to […]
Read moreElectrical detection of magnetic domain walls by inverse and direct spin Hall effect (August 28th, 2017)
Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]
Read moreSpin-Hall Voltage over a Large Length Scale in Bulk Germanium (July 20th, 2017)
Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]
Read moreNanotweezers and their remote actuation by magnetic fields (May 23rd, 2017)
We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics. The mechanical manipulation of micro- and nanometric objects relies on constantly evolving techniques, which are of great interest to the life sciences and biotechnologies. Numerous biomedical studies, either fundamental or applied to […]
Read moreMillimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance (April 14th, 2017)
We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]
Read moreMagneto-optical micromechanical systems for magnetic field mapping (February 17th, 2017)
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, linear response, required proximity to the sample, as well as the ability to filter noise and […]
Read moreEvidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface (January 09th, 2017)
We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]
Read moreMisalign to write faster (October 17th, 2016)
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]
Read moreComparison of the use of NiFe and CoFe as electrodes for metallic lateral spin valves (May 17th, 2016)
A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to using the electric charge of the electron, spintronic technologies […]
Read moreA fluctuating magnetic order allows more spins to pass through an interface (February 26th, 2016)
Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current. The spin current propagates from the ferromagnet into a neighboring layer if permitted by the interface. This is equivalent to saying that the air-flow generated by rotating the blades of a fan can propagate in a neighboring room if the […]
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