FACILITIES




Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]

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We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics. The mechanical manipulation of micro- and nanometric objects relies on constantly evolving techniques, which are of great interest to the life sciences and biotechnologies. Numerous biomedical studies, either fundamental or applied to […]

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We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

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Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, linear response, required proximity to the sample, as well as the ability to filter noise and […]

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We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

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Misalign to write faster

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

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A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to using the electric charge of the electron, spintronic technologies […]

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Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current. The spin current propagates from the ferromagnet into a neighboring layer if permitted by the interface. This is equivalent to saying that the air-flow generated by rotating the blades of a fan can propagate in a neighboring room if the […]

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Ces structures magnétiques nanométriques ont été observées à températures ambiante dans des matériaux compatibles avec l’industrie électronique. Ces résultats font sauter un verrou important quant à l’utilisation des skyrmions comme vecteur d’information à l’échelle nanométrique dans nos ordinateurs.

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MATERIALS GROWTH

Overview Materials development is a fundamental activity at SPINTEC, a determining factor for the success of our research projects. The Materials Growth team assists and participates on the development and characterization of new materials and stacks for the different research projects. Sputtering and molecular beam epitaxy (MBE) are our two main deposition techniques. The team […]

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