The EU GREAT Project delivered its 2nd tape-out demonstrator (October 16th, 2018)
A full hybrid magnetic/CMOS System on Chip (SoC), embedding analog and digital functions based on spintronics devices on the same die, has been designed and sent to manufacturing. It is the first demonstrator of such a circuit worldwide. Spintronics, which aims at using magnetic devices beside standard CMOS transistors, has been intensively studied for several […]
Read moreSingle-particle mass spectrometry with nanomechanical resonators (October 04th, 2018)
Mass spectrometry (MS) is an essential tool in a broad variety of fields, with good efficiency up to the kDa mass range (~10-21 g). We demonstrate here Nano-electro-mechanical systems mass spectroscopy (NEMS-MS) with arrays of individually addressed nanomechanical resonators, allowing for measurements in the MDa (~10−18 g) to GDa (~10−15 g) mass range. Monocrystalline silicon […]
Read moreHighly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer (October 03rd, 2018)
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates. Conventional spintronics is based upon the use of magnetic materials to […]
Read moreSub-10nm thermally stable Perpendicular Shape Anisotropy magnetic memory (August 24th, 2018)
A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]
Read moreNonlinear properties of pure spin conductors (June 21st, 2018)
N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. Ben Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, and O. Klein, Phys. Rev. B 97, 060409 (2018). N. Thiery, V. V. […]
Read moreDetection of Short-Waved Spin Waves in Individual Microscopic Spin-Wave Waveguides Using the Inverse Spin Hall Effect (June 21st, 2018)
T. Brächer, M. Fabre, T. Meyer, T. Fischer, S. Auffret, O. Boulle, U. Ebels, P. Pirro, G. Gaudin, Nano Lett. 17, 7234 (2017) Detection of Short-Waved Spin Waves in Individual Microscopic Spin-Wave Waveguides Using the Inverse Spin Hall Effect We report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm […]
Read moreGiant magnetoresistance in lateral metallic nanostructures for spintronic applications (January 22nd, 2018)
This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]
Read moreElectrical detection of magnetic domain walls by inverse and direct spin Hall effect (August 28th, 2017)
Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]
Read moreEvidence for spin to charge conversion in GeTe(111), among most read 2016 papers of APL Mater. (August 28th, 2017)
GeTe has been predicted to be the father compound of a new class of multifunctional materials: ferroelectric Rashba semiconductors. In that sense, they are expected to display a coupling between spin-dependent k-splitting and ferroelectricity, thus allowing an electrical control of spin-to-charge conversion phenomena in spintronics. This paper reported the epitaxial growth of Fe/GeTe(111) heterostructures by […]
Read moreSpin-Hall Voltage over a Large Length Scale in Bulk Germanium (July 20th, 2017)
Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]
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