The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)    

Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.

Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction

We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0

Bimodal distribution of blocking temperature for exchange-biased ferromagnetic/antiferromagnetic bilayers: A granular Monte Carlo study with less stable magnetic regions spread over the interface, Lhoutellier, G., Ledue, D., Patte, R., Barbe, F., Dieny, B., Baltz, V., Journal of Physics D: Applied Physics, 48, 115001 (2015)

Study of spin-orbit torque (SOT) and spin transfer torque (STT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodes, Jabeur, K., di Pendina, G., Prenat, G., Microelectronics Journal, xx, yy (2015)

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications, Di Pendina, G., Zianbetov, E., Beigne, E., Journal of Applied Physics, 117, 4 (2015)

Perpendicular magnetic tunnel junctions with a synthetic storage layer: A new route towards Pt-and Pd-free junctions, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Scientific reports, xx, yy (2015)

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal, Cubukcu, M., Martin, M.B., Laczkowski, P., Vergnaud, C., Marty, A., Attané, J.-P., Seneor, P., Anane, A., Deranlot, C., Fert, A., Auffret, S., Ducruet, C., Notin, L., Vila, L., Jamet, M., Journal of Applied Physics, 117, 083909 (2015)

Generation of coherent spin-wave modes in Yttrium-Iron garnet microdiscs by spin-orbit torque, Collet, M., d’Allivy Kelly, O., Bernard, R., Bortolotti, P., Cros, V., Anane, A., de Milly, X., de Loubens, G., Naletov, V.V., Klein, O., Demidov, V.E. , Demokritov, S.O., Prieto, J.L., Munoz, M., Nature Materials, xx, yy (2015)