Research team MRAM memories, within the Devices group
Impact of intergrain effective coupling due to huge thermal gradients in heat assisted magnetic recording (November 12th, 2018)
Heat assisted magnetic recording (HAMR) is a new hard disk drive (HDD) recording technology which uses a temporary near field heating of the media during write to increase hard disk drive storage density. It has been under development in HDD industry for more than 10 years. A phenomenon totally overlooked during the past development of […]
Read moreBernard DIENY receives the IEEE Carrier Achievement Award (November 01st, 2018)
Bernard DIENY receives the 2018 IEEE Carrier Achievement Award for contributions to spintronics applications including spin-valves and MRAMs and for strengthening the relationship between magnetics and microelectronics communities. The Award will be handed out at the upcoming MMM/Intermag conference in Washington in January 2019. Through this award Bernard Diény becomes a life member in the […]
Read moreMasters thesis projects for Spring 2019 (October 10th, 2018)
You find here the list of proposals for Master-2 internships to take place during Spring 2019. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]
Read morePhD thesis defense: Ultimate scalability of STT MRAM: storage layer with perpendicular shape anisotropy (August 26th, 2018)
On Friday 31 Aug, Nicolas PERRISSIN defends his PhD at 14h00 in room M001 of Grenoble INP – Phelma – 3 Parvis Louis Néel – Grenoble. Keywords: STT MRAM, perpendicular shape anisotropy, Ultimate scalability Most of the actual STT-MRAM development effort is nowadays focused on out-of-plane magnetized MTJ taking advantage of the perpendicular magnetic anisotropy […]
Read moreSub-10nm thermally stable Perpendicular Shape Anisotropy magnetic memory (August 24th, 2018)
A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]
Read moreEditor – Topical issue in MRS bulletin: Advanced memory—Materials for a new era of information technology (April 10th, 2018)
Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. View online: DOI: 10.1557/mrs.2018.96 Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density […]
Read moreElectronique – Ruée sur les mémoires magnétiques (Industrie et Technologies, Mar 2018) (April 04th, 2018)
L’alliance de la microélectronique et du magnétisme, ou spintronique, s’avère prometteuse. Les géants du secteur s’intéressent notamment aux mémoires magnétiques. Industrie et Technologies 1007, 1st March 2018 [French]
Read moreSub-10nm thermally stable Perpendicular Shape Anisotropy STT-MRAM realized at SPINTEC (March 08th, 2018)
A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]
Read moreSeminar : Magnetisation manipulation with light and electrons femto-second pulses (February 23rd, 2018)
On March 29, We have the pleasure to welcome Stéphane MANGIN from Institut Jean Lamour, Université de Lorraine. He comes at Grenoble for the PHD defense of Jyotirmoy Chatterjee at 14H. He kindly offered to take this opportunity to give us a seminar which will take place at SPINTEC room 434A at 11:00 Since the […]
Read moreTwo very successful MRAM events organized by SPINTEC and the IEEE Magnetics Society at IEDM 2017 (January 24th, 2018)
IEDM is the main annual conference of the IEEE Electron Devices Society. It took place in San Francisco, 4-6 December 2017. Since 2016, IEEE EDS and IEEE Magnetics Society have been collaborating on the organization of joint events gathering experts in microelectronics and magnetism. With the rising interest of the microelectronics industry for the emerging […]
Read more