Research team MRAM memories, within the Devices group
Proposals for student internships for Spring 2018 (October 03rd, 2017)
You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]
Read moreBook – Introduction to Random-Access Memory (September 01st, 2017)
B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, […]
Read moreJean-Pierre Nozières rewarded with the CNRS Innovation Medal 2017 (August 21st, 2017)
The medal of innovation of CNRS is granted yearly to one or a few persons having conducted ground-breaking research, which led to key innovation in technology, life or social sectors. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in the technological, therapeutic or societal fields. Jean-Pierre […]
Read moreIn the frame of our ELECSPIN ANR project [1], we have an open position for a 12 months post-doc position. ELECSPIN project aims at developing spintronics devices based on manipulating magnetic properties by an electric field in oxides/ferromagnetic metal structures. The goal is to develop electric field assisted spin-transfer torque magnetic random access memories (STT-MRAM) […]
Read moreSeminar : Neuromorphic computing : From a memristive device to the learning process (July 05th, 2017)
on July, 12th, 14H, Steven Lequeux from Spintec, will give a seminar on “Neuromorphic computing : From a memristive device to the learning process”. The seminar will take place in Building 10.05, room 434. In the current context of information technology, the sequential processing carried out by classical computer architectures stumbles on problems of energy […]
Read moreReview – Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (June 28th, 2017)
B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to […]
Read morePoster and talk prizes at Intermag Dublin (May 03rd, 2017)
Nearly twenty scientists from SPINTEC participated in Intermag Dublin (24-28 April 2017), among which two thirds were PhD students and post-docs. Paul Noël was awarded a session poster prize (Large and tunable spin Hall angles in Au-based alloys: from intrinsic to side jump contributions), while Jyotirmoy Chatterjee was one of the five finalists for the […]
Read more18 months post-doc position: pMTJs for memory and microwave devices (November 16th, 2016)
In the frame of our H2020 project GREAT we have one open position for a postdoc or term contract for 18 months to characterize the spin transfer torque induced magnetic switching as well as rf excitations of perpendicular magnetic tunnel junction devices (pMTJs) with the aim to demonstrate the dual functionality for memory and microwave […]
Read moreSPINTEC’s spinoff HProbe offers 3D magnetic probers (November 03rd, 2016)
HProbe is the latest spin-off company from SPINTEC, based on our expertise in MRAM research at the wafer scale. HProbe offers a 3D magnetic field wafer-level electrical tester for all types of MRAM (STT, SOT, OST, …), planar and perpendicular MTJ, magnetic sensors etc. The tester embed all standard procedures for testing and analyzing devices. […]
Read moreMisalign to write faster (October 17th, 2016)
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]
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