The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.
Perpendicular Anisotropy Materials
High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.
Perpendicular STT MRAM
Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.
Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.
Perpendicular Shape Anisotropy
A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.
- Andrey TIMOPHEEV (2014-2017)
- Van Dai NGUYEN (2016-2018)
- J. Ranier Roiz (2015-2016)
- Nikita Strelkov (2016-2019)
- Luc TILLIE (2015-2018)
- Nicolas PERRISSIN (2015-2018)
- Jyotirmoy CHATTERGEE (2014-2017)
- Hieu Tan NGUYEN (2013-2016)
- Antoine Chavent (2013-2015)
- Jude GUELFFUCCI (2015-2017)
- Nathalie LAMARD (2016-2017)
- Guillaume LAVAITTE (2015-2016)
- Samsung SGMI (2014-2017)
- ANR Excalyb (2014-2017)
- Heumem (2015-2018)
- EU-FET Spice (2016-2019)
- EU Great (2016-2019)
- ERC Magical (2015-2020)
- CEA LETI, Grenoble, France
- Institut NEEL, Grenoble, France
- Crocus Technology, Grenoble, France
- Samsung, San Jose, USA
- Singulus AG, Kahl am Main, Germany
- Aarhus University, Aarhus, Denmark
- Radboud Universiteit, Neijmegen, Netherlands
- Misalign to write faster (October 17th, 2016)
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown ...
- Editor – Proceedings of the IEEE, Special issue on Spintronics (October 01st, 2016)
Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny
- Master students to visit SPINTEC and discuss our topics for internships (September 18th, 2016)
On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.
- GREAT – A H2020 ICT project at SPINTEC (June 30th, 2016)
Overview GREAT (European H2020 project) was accepted at the Summer 2015. Its kick-off meeting took place at SPINTEC in Grenoble on February 22nd-23rd 2016. The project aims at developing magnetic stacks able to equally perform memory, radio-frequency ...
- SPICE – An H2020 FET project at SPINTEC (May 19th, 2016)
A new research project has been accepted at the last FET H2020 call. The objective of SPICE is to realize a novel integration platform that combines photonic, magnetic and electronic components. Its validity will be shown ...